2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium On
DOI: 10.1109/iscs.2000.947128
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External electronic and optical evidence for internal quantum transport effects in BH-MQW lasers

Abstract: We report an anomalous temperature-dependence in the efficiency and threshold current of multi-quantum well buried heterostructure lasers between 60 K and 190 K. The behaviour is accompanied by sharp, discrete features in differential efficiency and differential resistance. We propose an explanation in terms of impeded interwell transport and the establishment of a strongly nonuniform distribution of carriers among the quantum wells.

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