Threshold concentration of MgO in near-stoichiometric LiNbO3 crystals

Péter, Á.; Polgár, K.; Kovács, László; Lengyel, K.

doi:10.1016/j.jcrysgro.2005.06.056

Cited by 59 publications

(40 citation statements)

References 18 publications

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“…In nearly stoichiometric LiNbO 3 (sLN) crystals where the Nb Li concentration is almost zero, the threshold value of the dopant concentration can be lower than 0.2 mol. % as was observed for Mg-doped sLN [12] used for instance for terahertz pulse generation [13]. Zr-doped nearly stoichiometric LN crystals prepared by the vapor transport equilibration method were found to have high resistance against optical damage when doped above 0.5 mol.…”

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“…% realized in our samples, monotonously increases with increasing concentration of Zr in the starting flux. The relatively high distribution coefficient of Zr as compared to that observed in the melt-grown congruent crystals [3] may be related to the different growing technique, similarly to the case of Mg [12].For optical spectroscopical measurements 1-2 mm thick z-and y-cut samples have been prepared. The UV-visible absorption spectra of z-cut sLN:Zr crystals were measured by a Jasco V-550 spectrometer at room temperature.…”

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“…% concentration range were grown by the high-temperature top-seeded solution growth method using K 2 O flux [12]. The Zr concentration in the crystal was determined by inductively coupled plasma mass spectroscopy (ICP-MS).…”

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Photorefractive damage resistance threshold in stoichiometric LiNbO_3:Zr crystals

et al. 2013

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Several optical methods including ultraviolet absorption, infrared absorption of the hydroxyl ions, Raman spectroscopy, and the Z-scan method have been used to determine the damage resistance threshold in 0-0.72 mol. % Zr-containing, flux-grown, nearly stoichiometric LiNbO 3 single crystals. All spectroscopical methods used indicate that samples containing at least ≈0.085 mol: % Zr in the crystal are above the threshold while Z-scan data locate the photorefractive damage threshold between 0.085 and 0.314 mol. % Zr. For LN grown from congruent melt the threshold concentration of the optical damage resistant (ODR) ions is roughly 5, 4, and 2 mol. % for di-, tri-, and tetravalent ions, respectively. For example, the threshold concentration for Zr-doped congruent LN crystals was found to be at about 2 mol. % [3,10,11]. Another factor beside the ODR ions and their valency strongly effecting the threshold concentration is stoichiometry of the crystal. The incorporation of ODR ions reduces the amount of antisite Nb Li in the lattice. In nearly stoichiometric LiNbO 3 (sLN) crystals where the Nb Li concentration is almost zero, the threshold value of the dopant concentration can be lower than 0.2 mol. % as was observed for Mg-doped sLN [12] used for instance for terahertz pulse generation [13]. Zr-doped nearly stoichiometric LN crystals prepared by the vapor transport equilibration method were found to have high resistance against optical damage when doped above 0.5 mol. % Zr [14]. The basic advantage of choosing tetravalent ODR dopants comes from their lower damage threshold concentrations; lower built-in dopant content facilitates the growth of more homogeneous crystals, resulting in high-quality samples for device applications.The aim of the present work is to characterize the damage resistance properties of tetravalent Zr-doped sLN crystals by ultraviolet (UV), infrared (IR), and Raman spectroscopies as well as by the Z-scan method. These methods proved earlier very efficient to determine the threshold concentration of the dopants.A series of stoichiometric LN crystals doped with Zr in the 0-0.45 mol. % concentration range were grown by the high-temperature top-seeded solution growth method using K 2 O flux [12]. The Zr concentration in the crystal was determined by inductively coupled plasma mass spectroscopy (ICP-MS). As shown in Fig. 1, the amount of incorporated Zr, at least in the range 0-0.715 mol. % realized in our samples, monotonously increases with increasing concentration of Zr in the starting flux. The relatively high distribution coefficient of Zr as compared to that observed in the melt-grown congruent crystals [3] may be related to the different growing technique, similarly to the case of Mg [12].For optical spectroscopical measurements 1-2 mm thick z-and y-cut samples have been prepared. The UV-visible absorption spectra of z-cut sLN:Zr crystals were measured by a Jasco V-550 spectrometer at room temperature. The spectra of the stretching vibrational bands of the hydroxyl ions (OH − ) in sLN:Zr were

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confidence: 99%

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Photorefractive damage resistance threshold in stoichiometric LiNbO_3:Zr crystals

et al. 2013

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“…2 Experiments LiNbO 3 :Mg crystals were grown by the Czochralski technique (congruent, Li/Nb = 0.945 in the melt and intermediate composition, Li/Nb = 1.1 in the melt) and by top-seeded solution growth method with K 2 O based flux (stoichiometric composition) [6]. Y-cut samples were prepared and polished for optical measurements.…”

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The effect of Mg doping on the Raman spectra of LiNbO₃ crystals

Lengyel

Kovács

Péter

et al. 2007

Phys. Status Solidi (c)

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LiNbO3:Mg crystals doped with 0-8 mol% Mg with stoichiometric, intermediate and congruent compositions were systematically investigated by Raman spectroscopy in backscattering y(zx)y and y(zz)y geometries. The halfwidths of E(TO3) -E(TO9) and A1(TO1) -A1(TO4) bands, which have a significant composition dependence for undoped LiNbO3 crystals, show only weak Mg-concentration dependence below the photorefractive threshold. This is a consequence of the counteracting effect of the decreasing amount of Nb ions at Li-ion sites (Nb Li ) and increasing amount of Mg ions at Li-ion sites (Mg Li ). The halfwidths of these bands, however, increase linearly with growing Mg content for samples above the threshold, irrespective of the Li/Nb ratio. The same effect was observed in the Mg dependence of the position and halfwidth of the two-phonon band at about 689 -705 cm −1 . The change in the Mg concentration dependence of these parameters at a given Li/Nb ratio determines the same threshold value as that concluded from IR and UV spectroscopic measurements.1 Introduction LiNbO 3 is a well-known non-linear optical material, but its application is often limited by the photorefractive effect. The resistance to optical damage induced by the photorefractive effect can be improved by doping the crystal with MgO above a threshold concentration [1]. Many physical properties depend on MgO addition and change at the threshold value, e.g. , UV absorption edge [3], Raman spectrum [4] etc. In previous Raman experiments the Mg incorporation was investigated only in congruent crystals [4,5]. In the present work 0-8 mol% Mg-doped LiNbO 3 crystals grown from congruent, stoichiometric and intermediate compositions were systematically studied by Raman spectroscopy. Our aim was to understand the incorporation mechanism of Mg ions into the lattice and to determine the composition of the crystal (including the Mg content) using a simple, non-destructive, spectroscopic method.

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Light‐mediated ferroelectric domain engineering and micro‐structuring of lithium niobate crystals

Ying

Muir

Valdivia

et al. 2011

Laser & Photonics Reviews

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An overview is presented of recently developed light‐mediated methods for ferroelectric domain engineering of lithium niobate single crystals. These methods include light‐assisted poling, UV laser‐induced inhibition of poling, and all‐optical poling. In addition to the primary application of ferroelectric domain patterns, namely the realization of non‐linear optical devices, the ability of transferring a domain pattern into a topographical structure by domain selective etching allows also for surface structuring of lithium niobate. This intertwining between ferroelectric domain patterns and surface topography has been used to fabricate exquisite micro‐structures based on unusual domains generated purposefully by these light‐mediated methods.

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Threshold concentration of MgO in near-stoichiometric LiNbO3 crystals

Cited by 59 publications

References 18 publications

Photorefractive damage resistance threshold in stoichiometric LiNbO_3:Zr crystals

Photorefractive damage resistance threshold in stoichiometric LiNbO_3:Zr crystals

The effect of Mg doping on the Raman spectra of LiNbO₃ crystals

Light‐mediated ferroelectric domain engineering and micro‐structuring of lithium niobate crystals

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Threshold concentration of MgO in near-stoichiometric LiNbO3 crystals

Cited by 59 publications

References 18 publications

Photorefractive damage resistance threshold in stoichiometric LiNbO_3:Zr crystals

Photorefractive damage resistance threshold in stoichiometric LiNbO_3:Zr crystals

The effect of Mg doping on the Raman spectra of LiNbO3 crystals

Light‐mediated ferroelectric domain engineering and micro‐structuring of lithium niobate crystals

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The effect of Mg doping on the Raman spectra of LiNbO₃ crystals