2013
DOI: 10.1002/mop.28081
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Three‐port cascade de‐embedding methodology with the dangling leg effect considered for pHEMT electron trapping characterization at microwave frequency

Abstract: A three‐port cascade de‐embedding procedure utilized to accurately eliminate the source dangling leg effect of a pseudomorphic High Electron Mobility Transistor (pHEMT) test structure without shielding is presented. The measured device under test (DUT) is de‐embedded by using the experimental and electromagnetic (EM) simulated data of dummy structures and their difference is below 1%. In addition, the extracted equivalent circuit parameters of the pHEMT exhibit the frequency‐independent characteristics, indica… Show more

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Cited by 3 publications
(2 citation statements)
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“…Our previous research focused on three‐port S ‐parameter de‐embedding for III–V device characterization . Other works devoted to breakdown model establishment for silicon MOSFETs and to CMOS PA design in the breakdown region .…”
Section: Introductionmentioning
confidence: 99%
“…Our previous research focused on three‐port S ‐parameter de‐embedding for III–V device characterization . Other works devoted to breakdown model establishment for silicon MOSFETs and to CMOS PA design in the breakdown region .…”
Section: Introductionmentioning
confidence: 99%
“…Our previous research was devoted to III‐V device characterization with a three‐port de‐embedding method . Other works about silicon devices focused on p–n junction mixed breakdown characterization and MOSFET breakdown modeling .…”
Section: Introductionmentioning
confidence: 99%