Three Musketeers: demonstration of multilevel memory, selector, and synaptic behaviors from an Ag-GeTe based chalcogenide material

Forming‐Free Pt/Ti/AlOx/CeOx/Pt Multilayer Memristors with Multistate and Synaptic Characteristics

“…For biological synapses, the most important rule will be STDP [45][46][47][48][49]. Generally, STDP indicates that if the prespike precedes the postspike (Δt > 0); then, long-term potentiation (LTP) will occur, and synaptic weight (w) will increase [14].…”

Image processing with a multi-level ultra-fast three dimensionally integrated perovskite nanowire array

“…Herein, a HP Re-RAM device was fabricated with a lead-free, methyl ammonium bismuth iodide (MBI) nanowire (NW) array, rooted in a porous alumina membrane (PAM) sandwiched between silver (Ag) and aluminum (Al) electrodes. The MBI NW Re-RAM exhibited robust switching with an ON/OFF ratio of B10 7 , an ultra-fast writing and erasing speed of 2 ns and 900 ps, respectively, and an unabated endurance of 5 Â 10 6 cycles. An in-depth mechanistic study including ex situ transmission electron microscopy (TEM), time-of-flight secondary mass ion spectroscopy (ToF-SIMS) and X-ray photoelectron spectroscopy (XPS) proved the origin of the switching to be electrochemical metallization (ECM) of intruding Ag inside the body of the monocrystalline MBI NWs.…”

“…1–4 Among the different non-volatile memories demonstrating processing, resistive RAMs (Re-RAMs) have attracted enormous attention owing to their compatibility with complex neural networks, low power computation, high-density integration and excellent data retention properties. 5–9 Traditionally, a plethora of materials including selenides, chalcogenides, transition metal oxides, etc. have been explored as switching matrices in Re-RAMs for demonstrating brain-inspired computing.…”

“…Employing the robust multi-level switching behaviour, image processing functions of embossing, outlining and sharpening were successfully implemented.complex neural networks, low power computation, high-density integration and excellent data retention properties. [5][6][7][8][9] Traditionally, a plethora of materials including selenides, chalcogenides, transition metal oxides, etc. have been explored as switching matrices in Re-RAMs for demonstrating brain-inspired computing.…”

Exchange Bias Coupling and Bipolar Resistive Switching at Room Temperature on GaSb/Mn Multilayers for Resistive Memories Applications

“…In the rst case, metallic oxides as Ti-doped NbO 2 have been employed as a selective device for enhancing the performance of resistive non-volatile memories based on the crossbar structure, like an alternative to preventing that sneak current path problem, where the selectivity around 5x10 4 with a very low off current (5x10 − 11 A) was reported [22]; and, for the second case, the thin lm memristive devices were constructed using Al/Bi 2 WO 6 /FTO characterized by bipolar resistive switching, and, its transport properties for HRS is based on Schottky conduction mechanism, whilst, LRS is governed by Ohmic charge transport mechanism [23]. Besides, memristive devices based on Ag/GeTe/Ag and Ag/FeWO 4 /FTO have presented promising features in applications, such as memories, selectors, synaptic learning functionalities and, neurophormic computing, respectively [24,25].…”