2013 IEEE Electric Ship Technologies Symposium (ESTS) 2013
DOI: 10.1109/ests.2013.6523728
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Three-level inverter with 60 A, 4.5 kV Si IGBT/SiC JBS power modules for marine applications

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Cited by 3 publications
(3 citation statements)
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“…7 [39], [40]. It is worth noting that the use of this three-level VSI is followed in order to enable higher voltage and power operation [41]- [43].…”
Section: B MV Ac Configurationmentioning
confidence: 99%
See 1 more Smart Citation
“…7 [39], [40]. It is worth noting that the use of this three-level VSI is followed in order to enable higher voltage and power operation [41]- [43].…”
Section: B MV Ac Configurationmentioning
confidence: 99%
“…Among the prior integration schemes, DC-3, which is shown in Fig. 10, is seen to be the simplest one in terms of the References [13], [15], [24], [43], [13], [46]- [48], [28], [49], [64], [65] [67] [26], [68] - [25]- [38] [39]- [41] [50]- [59] [40]- [43] Typical vessel segment(s) prior described integration complexity. Due to the direct-online connection of the batteries, the required number of PCSs is the lowest and only the power from the fuel cells has to be controlled.…”
Section: B Integration Complexitymentioning
confidence: 99%
“…[1,2] Until now, a large number of SiC junction barrier Schottky (JBS) rectifiers have been reported for a wide range of applications. [3][4][5] The main advantages of the JBS rectifier are the Schottky-like on-state and the fast switching characteristics together with the offstate characteristics having a low leakage current similar to that of the PiN rectifier. To reach a breakdown voltage close to the ideal one, various junction termination techniques for the SiC devices have been developed, involving field plate (FP), [6] field limiting ring (FLR), [7] and single-and multiple-junction termination extensions (JTE).…”
Section: Introductionmentioning
confidence: 99%