Three-Input NPN Class Gate Library for Atomic Silicon Quantum Dots

Design Automation for Emerging Technologies

“…Instead of the CMOS that uses only simple gates (2-input AND/OR) and inverters, the other FCNs use the Majority and inverters. Specifically in SiDB, it is possible to implement an XOR or a multiplexer with a single 3-input gate in SiDB [14]. In other technologies, these circuits are more complex, using multiple AND, OR, Majority and inverters.…”

“…In this work, the designs have been validated before the physical implementation using Silicon Quantum Atomic Designer (SiQAD) simulator. Furthermore, prior works present several other simulated designs for SiDB, such as Y-shaped [15] and T-shaped [17] 2-input gates, wire crossing [15,17], 3-input gates for all NPN classes [14]. In addition, there are more complex circuits such as half-adder [15] and full-adder [17].…”

Charged Defect Simulation in SiDB Systems

“…One such implementation comes in the form of quantum dots made of silicon dangling bonds (SiDBs) on the hydrogen passivated silicon 100 2×1 surface (H-Si(100)-2×1), with the experimentally demonstrated capability to implement an OR gate that spans the length of < 10 nm [5]. This groundbreaking experimental demonstration, combined with latest developments in computer-aided design (CAD) capabilities offered by SiQAD [6], has spurred wide ranging research interests in the technology including the proposal of gate designs [6]- [10], support from an electronic design automation framework [11], an automated quantum dot gate design tool based on reinforcement learning [12], and evaluation of future applications [7], [13]. However, current simulation capabilities assume an ideal physical environment consisting of a perfect, i.e., defect-free, silicon monocrystal substrate.…”

“…Further exploration into SiDB logic implementations came in the form of computer-aided studies with the use of SiQAD [6]. Y-shaped BDL gates that implement various truth tables were proposed [6], [11], as were T/+-shaped BDL gates [8]- [10] and gates that employ alternative logic representations [13], exemplifying the flexibility of the SiDB logic platform. Gate libraries and electronic design automation frameworks have also been developed, which allow SiDB circuits to be placed and routed on a hexagonal grid with demonstrated networks up to 32 × 10 3 nm 2 in size [11].…”

“…However, existing studies place little emphasis on the role of environmental defects and surface imperfections. Although some studies examine the sensitivity of logic gates to changes in environmental variables by finding their operational domain which defines the domain of physical parameters that the gate is expected to function [6], [10], [13], these domains remain untested against the introduction of defects or other environmental imperfections. An OR gate found in [6] (which was a slight modification from the experimentally demonstrated version in [5]) is included at the right side of the figure in logic 01 configuration.…”