Atomically Precise Manufacturing of Silicon Electronics

Abstract

Atomically precise manufacturing (APM) is a key technique that involves the direct control of atoms in order to manufacture products or components of products. It has been developed most successfully using scanning probe methods and has received particular attention for developing atom scale electronics with a focus on silicon-based systems. This review captures the development of silicon atom-based electronics and is divided into several sections that will cover characterization and atom manipulation of silicon surfaces with scanning tunneling microscopy and atomic force microscopy, development of silicon dangling bonds as atomic quantum dots, creation of atom scale devices, and the wiring and packaging of those circuits. The review will also cover the advance of silicon dangling bond logic design and the progress of silicon quantum atomic designer (SiQAD) simulators. Finally, an outlook of APM and silicon atom electronics will be provided.

First-principles study of electronic and magnetic properties of Fe atoms on Cu2N/Cu(100)

“…Recent progresses in the atomically precise manipulation of TM atoms on substrates have demonstrated the feasibility of manufacturing atom-scale spintronic devices. [16,17] It has been revealed that TM atoms on ultrathin MgO(100) layers deposited on Ag(100) substrates, denoted as MgO(100)/Ag(100), show intriguing magnetic properties. For instance, a single Co atom on MgO(100)/Ag(100) achieved the magnetic anisotropy limit; [11] an isolated Fe atom on MgO(100)/Ag(100) manifested strong perpendicular magnetic anisotropy with the largest reported magnetic anisotropy energy (MAE) for Fe atoms adsorbed on surfaces; [12] an individual Ho atom on MgO(100)/Ag(100) exhibited a long relax-ation time of magnetic remanence.…”