2009
DOI: 10.1149/1.3183702
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Three-Dimensional Plasma Etching Simulation using Advanced Ray Tracing and Level Set Techniques

Abstract: We present three-dimensional simulation techniques for plasma etching processes. Models based on Langmuir-type adsorption and on ballistic particle transport at feature scale can be efficiently solved in three dimensions. Surface coverages are self-consistently calculated. The local sputter rates of ions and the fluxes of neutrals are computed using modern ray tracing algorithms. In this way angle and energy dependent sputter yields or specular reflections of ions can be incorporated in a natural manner. For t… Show more

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Cited by 2 publications
(1 citation statement)
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“…This implementation was improved for silicon dioxide etching by including a Monte Carlo module that considers different species [302]. Finally, Ertl et al presented a SFM-based RIE simulator of silicon coupled with a Monte Carlo module for flux calculation [260,303,304].…”
Section: Introductionmentioning
confidence: 99%
“…This implementation was improved for silicon dioxide etching by including a Monte Carlo module that considers different species [302]. Finally, Ertl et al presented a SFM-based RIE simulator of silicon coupled with a Monte Carlo module for flux calculation [260,303,304].…”
Section: Introductionmentioning
confidence: 99%