Three-dimensional numerical simulation of thermal convection in an industrial Czochralski melt: comparison to experimental results

Vizman, Daniel; Gräbner, O.; Müller, G.

doi:10.1016/s0022-0248(01)01633-5

Cited by 66 publications

(53 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…All the other material properties are given in Table 1. [14] and directional solidification processes [15].…”

Section: Numerical Modelmentioning

confidence: 99%

“…Because these coefficients are very difficult to be measured at melting temperature the numerical simulations can be affected by the errors in diffusion constants. For this study the diffusion coefficients are chosen in a range characteristic for the most present impurities in the silicon crystal: C, N, O, which have the diffusion coefficients between 2 -5•10 -8 m 2 /s [5,6,14] .…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Influence of Mechanical Stirring on the Crucible Dissolution Rate and Impurities Distribution in Directional Solidification of Multicrystalline Silicon

Popescu

Vizman

2015

Annals of West University of Timisoara - Physics

View full text Add to dashboard Cite

In this study, time dependent three-dimensional numerical simulations were carried out using the STHAMAS3D software in order to understand the effects of forced convection induced by mechanical stirring of the melt, on the crucible dissolution rate and on the impurities distribution in multicrystalline silicon (mc-Si) melt for different values of the diffusion coefficient.Numerical simulations were performed on a pilot scale furnace with crucible dimensions of 38x38x40cm 3 . The computational domain used for the local 3D-simulations consists of melt and crystal.The dissolution rate was estimated from the total mass of impurities that was found in the silicon melt after a certain period of time. The obtained results show that enhanced convection produced by a mechanical stirrer leads to a significant increase of the dissolution rate and also to a uniform distribution of impurities in the melt.

show abstract

“…All the other material properties are given in Table 1. [14] and directional solidification processes [15].…”

Section: Numerical Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Influence of Mechanical Stirring on the Crucible Dissolution Rate and Impurities Distribution in Directional Solidification of Multicrystalline Silicon

Popescu

Vizman

2015

Annals of West University of Timisoara - Physics

View full text Add to dashboard Cite

show abstract

“…1. The dense foam lid (8) insulates an air layer over a free surface from the ambient effects. An average temperature of the "crucible-melt-crystal" assembly is maintained as nearly as possible to ambient temperature.…”

Section: Physical Modelmentioning

confidence: 99%

“…Their calculation results are used for improving the industrial Cz pullers and crystal growth modes. However, until present the calculated results for crystallization process have not been verified in detail by physical modeling [7][8][9].…”

Section: Shapes In the Joint Action Of Thermal Convection And Crymentioning

confidence: 99%

Heptadecane and Gallium Crystallization in Hydrodynamic Czochralski Model

Бердников¹,

Prostomolotov²,

Verezub³

et al. 2015

JMSE-A

View full text Add to dashboard Cite

Abstract:The processes of convective heat transfer and crystallization were studied on basis of the simplified, but a unified calculation-experimental Czochralski model, using two materials with the melting temperature close to ambient room temperature: 1) heptadecane with a low thermal conductivity; 2) gallium with the high one. The transparency of heptadecane melt has permitted to visualize both the melt stream structures and geometry of its crystallized mass in the laboratory experiment and to provide data for verification of the corresponding calculation model. Numerical calculations have allowed to parametrically study the flow structure, heat fluxes on the cooled disk and to assess dependence of the melt-crystal interface for both these substances on the modes of convective heat exchange: thermal-gravitational and mixed (i.e., with an additional crystal rotation) convection.

show abstract

“…A winner is surely silicon Cz growth due to the large size of the crystal and the crucible and the low melt viscosity. The turbulent melt°ow in the crucible is non-steady and essentially three-dimensional [60]. An approach based on the Reynolds-averaged Navier-Stokes equations (RANS) could not predict with a su±cient accuracy required for engineering purposes such growth characteristics as the melt/crystal phase boundary shape or the oxygen concentration in the crystal that are critical for the crystal quality [28], [34].…”

Section: Melt Flowmentioning

confidence: 99%

Industrial challenges for numerical simulation of crystal growth

Богданов¹,

Ofengeim²,

Zhmakin³

2004

Open Physics

View full text Add to dashboard Cite

Abstract:Numerical simulation of industrial crystal growth is di¯cult due to its multidisciplinary nature and the complex geometry of the real-life growth equipment. An attempt is made to itemize physical phenomena dominant in the di¬erent methods for growth of bulk crystals from the melt and the vapor phase as well as to review corresponding numerical approaches. Academic research and industrial applications are compared. Development of a computational engine and a graphic user interface of the industry-oriented codes is discussed. A simulator for the entire growth process of bulk crystals by sublimation method is described.

show abstract

Three-dimensional numerical simulation of thermal convection in an industrial Czochralski melt: comparison to experimental results

Cited by 66 publications

References 14 publications

Influence of Mechanical Stirring on the Crucible Dissolution Rate and Impurities Distribution in Directional Solidification of Multicrystalline Silicon

Influence of Mechanical Stirring on the Crucible Dissolution Rate and Impurities Distribution in Directional Solidification of Multicrystalline Silicon

Heptadecane and Gallium Crystallization in Hydrodynamic Czochralski Model

Industrial challenges for numerical simulation of crystal growth

Contact Info

Product

Resources

About