2020
DOI: 10.1021/acs.nanolett.9b05271
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Three-Dimensional Nanoscale Flexible Memristor Networks with Ultralow Power for Information Transmission and Processing Application

Abstract: To construct an artificial intelligence system with high efficient information integration and computing capability like the human brain, it is necessary to realize the biological neurotransmission and information processing in artificial neural network (ANN), rather than a single electronic synapse as most reports. Because the power consumption of single synaptic event is ∼10 fJ in biology, designing an intelligent memristors-based 3D ANN with energy consumption lower than femtojoule-level (e.g., attojoule-le… Show more

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Cited by 151 publications
(133 citation statements)
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“…Various amorphous (e.g., TaO x and WO x ) and complex oxide (e.g., SrTiO 3 and Pr 0.7 Ca 0.3 MnO 3 ) materials have been widely employed as the active layer for the valence change memristive synapses. [37,[71][72][73][74][75][76][98][99][100][101][102][103][104][105][106][107][108][109][110][111][112][113] The electric-field-driven soft-breakdown can generate several types of charged ions and vacancies in the active layer ( Figure 2b). [36,54,114] Inert or reactive metals have been used for both electrode terminals.…”
Section: Valence Change Synapsementioning
confidence: 99%
“…Various amorphous (e.g., TaO x and WO x ) and complex oxide (e.g., SrTiO 3 and Pr 0.7 Ca 0.3 MnO 3 ) materials have been widely employed as the active layer for the valence change memristive synapses. [37,[71][72][73][74][75][76][98][99][100][101][102][103][104][105][106][107][108][109][110][111][112][113] The electric-field-driven soft-breakdown can generate several types of charged ions and vacancies in the active layer ( Figure 2b). [36,54,114] Inert or reactive metals have been used for both electrode terminals.…”
Section: Valence Change Synapsementioning
confidence: 99%
“…Many 3D CBAs are reported based on this kind of structure. [ 51,138,162,163 ] In 2015, a two‐layer 1S1R CBA with a shared BL structure was first demonstrated by Intel and Micron, in which the 1 R was made of PCM with GeSb 2 Te 4 , and 1S was made of GeSe threshold switching memristor. Adam et al fabricated 3D horizontally stacked CBAs based on Pt/Al 2 O 3 /TiO 2‐ x /TiN/Pt memristors for neuromorphic computing, which is composed of two stacked passive 10 × 10 CBAs.…”
Section: Key Requirements and Progress For Large‐scale Memristor Cbasmentioning
confidence: 99%
“…For example, Wang et al prepared multiple nanoporous (NP) SiO x layers to control filament formation 29,30 , and Tour et al proposed a threedimensional NP Ta 2 O 5−x structure with graphene boasting high-density storage and low power consumption 31,32 . Obviously, a porous structure can regulate the conducting channel and enhance the device performance 33 .…”
Section: Introductionmentioning
confidence: 99%