Three-dimensional analysis of scattering losses due to sidewall roughness in microphotonic waveguides

124

Abstract:We demonstrate a monolithic photonic integration platform that leverages the existing state-of-the-art CMOS foundry infrastructure. In our approach, proven XeF 2 post-processing technology and compliance with electronic foundry process flows eliminate the need for specialized substrates or wafer bonding. This approach enables intimate integration of large numbers of nanophotonic devices alongside high-density, highperformance transistors at low initial and incremental cost. We demonstrate this platform by presenting grating-coupled, microring-resonator filter banks fabricated in an unmodified 28 nm bulk-CMOS process by sharing a mask set with standard electronic projects. The lithographic fidelity of this process enables the high-throughput fabrication of second-order, wavelength-division-multiplexing (WDM) filter banks that achieve low insertion loss without post-fabrication trimming. Bienstman, D. V. Thourhout, and R. Baets, "Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography," IEEE Photon. Technol. Lett. 16(5), 1328-1330 (2004). 6. Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, "Micrometre-scale silicon electro-optic modulator," Nature 435(7040), 325-327 (2005). 7. C. Gunn, "CMOS photonics for high-speed interconnects," IEEE Micro 26(2), 58-66 (2006). 8. Y. Vlasov, W. M. J. Green, and F. Xia, "High-throughput silicon nanophotonic wavelength-insensitive switch for on-chip optical networks," Nat. Photonics 2(4), 242-246 (2008

Section: Photonic Device Performance Analysissupporting

confidence: 85%

Nanophotonic integration in state-of-the-art CMOS foundries

Orcutt¹,

Khilo²,

Holzwarth³

et al. 2011

124

“…2) [13]. The coupling losses are about 8.5 dB that is one of the best values reported for this kind of waveguides.…”

Section: Linear Characterizationmentioning

confidence: 67%

Nonlinear properties of AlGaAs waveguides in continuous wave operation regime

Lacava¹,

Pusino²,

Minzioni³

et al. 2014

Aluminum Gallium Arsenide (AlGaAs) is an attractive platform for the development of integrated optical circuits for all-optical signal processing thanks to its large nonlinear coefficients in the 1.55-μm telecommunication spectral region. In this paper we discuss the results of the nonlinear continuous-wave optical characterization of AlGaAs waveguides at a wavelength of 1.55 μm. We also report the highest value ever reported in the literature for the real part of the nonlinear coefficient in this material (Re(γ) ≈521 W −1 m −1 ). 189-191 (1996) 9572-9580 (2012). ©2014 Optical Society of America

“…The optical waveguides were patterned using 193-nm DUV lithography and two different inductively-coupled-plasma reactive-ion etching processes (ICP RIE): the first process, with an etch depth of 120 nm, was used to define the grating coupler and to lower the waveguides height from 220 nm to 100 nm, whereas the second, with a full-etch depth of 220 nm, was used to define the lateral edges of both standard and lowered-height strip waveguides. Propagation losses for the fabricated waveguides were measured to be 1.7-2 dB/cm for the 100 nm high waveguides and 2.8-3 dB/cm for the 220 nm high waveguides, thus proving that the use of reduced height waveguides can be profitable for propagation loss reduction [9,10]. The experimental set-up used for the dispersion measurements is shown in Fig.…”

Section: Chip Structure and Experimental Setupmentioning

confidence: 92%

“…The interest for this particular waveguides is due to the fact that they offer promising advantages with respect to the two main limitations occurring in standard waveguides: propagation losses and nonlinear losses [7,8]. Regarding the propagation losses it has already been reported in the literature that using reduced-height waveguides allows reducing the interaction of the optical mode with the waveguide sidewall roughness [9,10], and as a consequence many of the integrated structures requiring low-losses (e.g. filters) are realized using reduced-height waveguides [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Group-velocity dispersion in SOI-based channel waveguides with reduced-height

Marchetti¹,

Vitali²,

Lacava³

et al. 2017

We report on the experimental characterization, in the telecom C-band, of groupvelocity dispersion (D) in 100-nm high rectangular strip waveguides realized by silicon-oninsulator technology. We compare the experimental results with numerical predictions, showing that 100-nm high waveguides exhibit normal dispersion and that the absolute value of the dispersion coefficient D decreases as the waveguide width is increased. D at 1550 nm varies from -8130 to -3900 ps/(nm·km) by increasing the waveguide width from 500 to 800 nm.