Threading dislocations in GaAs on pre-patterned Si and in post-patterned GaAs on Si

Selective epitaxial growth of GaAs on Si with strained short-period superlattices by molecular beam epitaxy under atomic hydrogen irradiation

“…5,11 Generally, in highly lattice-mismatched heteroepitaxy, 3D growth occurs. The formation of these ͕11n͖ and ͕011͖ facets would result from the slower growth rate on ͕11n͖ and ͕011͖ planes than that on a ͕100͖ plane during MBE growth.…”