“…5,11 Generally, in highly lattice-mismatched heteroepitaxy, 3D growth occurs. The formation of these ͕11n͖ and ͕011͖ facets would result from the slower growth rate on ͕11n͖ and ͕011͖ planes than that on a ͕100͖ plane during MBE growth.…”
Articles you may be interested inAnisotropy of selective epitaxy in nanoscale-patterned growth: GaAs nanowires selectively grown on a Si O 2patterned (001) substrate by molecular-beam epitaxy
“…5,11 Generally, in highly lattice-mismatched heteroepitaxy, 3D growth occurs. The formation of these ͕11n͖ and ͕011͖ facets would result from the slower growth rate on ͕11n͖ and ͕011͖ planes than that on a ͕100͖ plane during MBE growth.…”
Articles you may be interested inAnisotropy of selective epitaxy in nanoscale-patterned growth: GaAs nanowires selectively grown on a Si O 2patterned (001) substrate by molecular-beam epitaxy
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