Strain relaxation in selectively grown ZnSe-epilayers on patterned GaAs-substrates

Parthier, L.; Wissmann, H; Ortenberg, M. von

doi:10.1016/0022-0248(95)00872-1

Cited by 7 publications

(2 citation statements)

References 6 publications

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“…There are several approaches by which one can achieve this, including the direct growth of 1D or 2D systems or the controlled etching of heterostructures. Some examples of direct growth techniques of III-V and II-VI 1D and 0D structures are the growth of microcrystallites [7,8], growth on patterned substrates [9,10], cleaved edge overgrowth [11,12], strain modulation by using sputtered stressors [13,14] and self-organized growth [15,16]. The controlled etching techniques are all based on a lithography process to create an etch pattern followed by an etching process.…”

Section: Introductionmentioning

confidence: 99%

Comparison of multiple-quantum wells and quantum dots by below-bandgap photomodulated reflectivity

Klar

Wolverson

Ashenford

et al. 1996

Semicond. Sci. Technol.

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Large-area high density patterns of quantum dots with a diameter of 200 nm have been prepared from a series of four Zn0.93Mn0.07Te/ZnTe multiple quantum well structures of different well width (40Å, 60Å, 80Å and 100Å) by electron beam lithography followed by Ar + -ion beam etching. Below-bandgap photomodulated reflectivity spectra of the quantum dot samples and the parent heterostructures were then recorded at 10 K and the spectra were fitted to extract the linewidths and the energy positions of the excitonic transitions in each sample. The fitted results are compared to calculations of the transition energies in which the different strain states in the samples are taken into account. We show that the main effect of the nanofabrication process is a change in the strain state of the quantum dot samples compared to the parent heterostructures. The quantum dot pillars turn out to be freestanding, whereas the heterostructures are in a good approximation strained to the ZnTe lattice constant. The lateral size of the dots is such that extra confinement effects are not expected or observed.

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Section: Introductionmentioning

confidence: 99%

Comparison of multiple-quantum wells and quantum dots by below-bandgap photomodulated reflectivity

Klar

Wolverson

Ashenford

et al. 1996

Semicond. Sci. Technol.

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show abstract

“…For similar structures a complex strain situation was found, but no effect due to lateral confinement has been observed in the previous investigations. 8,9 The semiinsulating, ͑001͒ oriented GaAs substrates were patterned by holographic lithography using a Helium-Cd laser and wet chemical etching with a C 6 H 8 O 7 :H 2 O 2 ͑25:1͒ solution. This procedure yields gratings, consisting of trapezoidal shaped, 150 nm deep grooves along the ͓1 10͔ direction which are separated by 300 nm wide GaAs ridges.…”

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confidence: 99%