Threading dislocations in GaAs on Si grown with ?1 nm thick Si interlayers

Studies of lattice mismatch and threading dislocations in GaAs/Si grown by MBE

“…The dislocations emerging at (or around) the interface cannot go into the substrate because the shear modulus of the substrate is larger. A more thorough explanation on these defects is given by Tamura et al [19].…”