Thin silicon via crack-assisted layer exfoliation for photoelectrochemical water splitting

Abstract

Design and fabrication of thin Si photoanode using crack-assisted layer exfoliation A systematic investigation of the crack-assisted layer exfoliation method Optical simulation on the dependence of photoelectrochemical performance on Si thickness Demonstration of thin Si photoanode with notable photoelectrochemical performance

Protocol on the fabrication of monocrystalline thin semiconductor via crack-assisted layer exfoliation technique for photoelectrochemical water-splitting

“…In this protocol, we describe the initial crack propagation by applying external force to exfoliate Si thin film from its donor substrate ( Figure 3 ). Refer to our past work for a detailed explanation on crack propagation using various approaches ( Lee et al., 2020 , 2021 ). Fix the Ni stressor layer deposited Si donor substrate on a flat surface such as lab bench by attaching scotch tape at the edges of the Si donor substrate ( Figure 3 A).…”

“… (B) Cross-sectional SEM image of the thin Si. Figures were adopted with minor change from Lee et al. (2021) .…”

“…Further knowledge on thin semiconductor exfoliation procedure can be found in the literature ( Lee et al., 2020 , 2021 ).…”

“…In addition, we describe proof-of-concept application of the thin semiconductors for photoelectrochemical water-splitting to produce hydrogen fuel. For complete details on the use and execution of this protocol, please refer to Lee et al. (2021) .…”

Strategies for improving photoelectrochemical water splitting performance of Si‐based electrodes

“…[72] Copyright 2020 Oxford University Press and photochemical corrosion. 21,114 However, the instability can be solved by depositing a transparent passivation layer and/or stable electrocatalysts, such as stable oxide (TiO x , 77,115,116 ), corrosion-resistant electrocatalyst overlayer (Co 2 P, 38 CoS 2 , 33 MoS 2 , 52 NiO x , 80,87,88 a nd Ni(OH) 2 , 83 ), or MIS structure (Ni, 71,84 Ti, 72 NiFe, 85 Cu, 117 ). Thanks to the sluggish reaction kinetics (high overpotential) or water splitting on the Si photoelectrodes, 118 loading HER or OER cocatalysts to reduce the overpotential for water reduction or oxidation are necessary to achieve high STH conversion efficiency.…”