Protocol on the fabrication of monocrystalline thin semiconductor via crack-assisted layer exfoliation technique for photoelectrochemical water-splitting

Lee, Yong Hwan; Gupta, Bikesh; Tan, Hark Hoe; Jagadish, Chennupati; Oh, Jihun; Karuturi, Siva Krishna

doi:10.1016/j.xpro.2021.101015

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…This prevents the wafer from moving and floating on the chemical solution. [138] The screen-printing process for forming metal electrodes presents significant challenges due to the high-temperature firing process (> 900 °C) and mechanical pressure required for intimate contact with the thin c-Si wafer. [139] This process generates mechanical stress due to the coefficient of thermal expansion difference between c-Si and the printed metal, resulting in severe wafer bowing.…”

Section: Thin C-si Wafer Handling As Free-standing Filmmentioning

confidence: 99%

From Rigid to Flexible: Progress, Challenges and Prospects of Thin c‐Si Solar Energy Devices

Gupta,

Min,

Lee

et al. 2024

Advanced Energy Materials

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The increasing adoption of solar energy as a renewable power source marks a significant shift toward clean, sustainable alternatives to conventional energy forms. A notable development in this field is the advancement of thin monocrystalline silicon (c‐Si) solar cells. Characterized by their lightweight, flexible nature, these solar cells promise to transform the renewable energy landscape with enhanced durability, adaptability, and portability. Amidst the growing demand for sustainable energy solutions, refining and evolving thin c‐Si solar cell technologies is crucial. This review comprehensively examines the latest progress in thin c‐Si solar energy conversion device technologies, offering an extensive overview of current methodologies for producing thin c‐Si films, advanced light trapping techniques, surface passivation strategies, and methods for managing thin wafers. It also explores the wide‐ranging applications of thin c‐Si solar cells. Furthermore, this article sheds light on the techno‐economic aspects, highlighting the intertwined challenges of commercializing these innovative cells. Through an in‐depth analysis of the latest advancements, this review serves as a valuable resource for researchers and industry experts, keeping them abreast of current trends and catalyzing further advancements in thin c‐Si solar cell technology.

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Section: Thin C-si Wafer Handling As Free-standing Filmmentioning

confidence: 99%

From Rigid to Flexible: Progress, Challenges and Prospects of Thin c‐Si Solar Energy Devices

Gupta,

Min,

Lee

et al. 2024

Advanced Energy Materials

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“…Achievements and needs of modern technologies determine the leading topical direction of development of research in metal physics and semiconductor physics as the study of the properties of low-dimensional structures (nanostructures) and the development of scientifically sound means of their synthesis [1,2]. Modern experimental methods provide the possibility of creating porous structures single-crystal layers [3,4] and multilayer heterostructures [5,6]. The thickness of the layers in such structures, or the characteristic pore size, is from one to ten nanometres, which corresponds to the de Broglie wavelength of the charge carriers [7,8].…”

Section: Introductionmentioning

confidence: 99%

Calculation of the Energy Spectrum of Quantum Particle in Double Potential Pit

Lazarenko¹,

Tikhovod²,

Ковачов³

et al. 2022

Metallofiz. Noveishie Tekhnol.

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The problem of quantum particle in infinitely deep potential pit with an internal potential barrier of finite height is solved. The solution is performed in a simple algorithmic approach, which allows you to use the result in the study of semiconductor nanostructures. The real heterostructure corresponding to this model should look like thin layer of wideband semiconductor placed between two slightly thicker layers of narrowband semiconductor. To ensure the 'infinite depth' of the potential pit, layers of conductor must be applied to the outer side surfaces of the triple semiconductor heterostructure and negative electric potential must be applied. Another option for the practical implementation of the model can be done by placing two electrons in one potential pit. In this case, the pit is a local space, at the boundary of which negative electric potential is applied. The internal potential barrier arises due to the Coulomb interaction of electrons. An example of such a structure is a nanopore on the surface, or in the volume of a metal sample.

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Protocol on the fabrication of monocrystalline thin semiconductor via crack-assisted layer exfoliation technique for photoelectrochemical water-splitting

Cited by 2 publications

References 6 publications

From Rigid to Flexible: Progress, Challenges and Prospects of Thin c‐Si Solar Energy Devices

From Rigid to Flexible: Progress, Challenges and Prospects of Thin c‐Si Solar Energy Devices

Calculation of the Energy Spectrum of Quantum Particle in Double Potential Pit

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