Thin porous indium tin oxide nanoparticle films: effects of annealing in vacuum and air

Electrochemically-Gated Field-Effect Transistor with Indium Tin Oxide Nanoparticles as Active Layer

“…The resistivity of the nanoparticle assembly can be calculated readily as 0.025 Ω cm. This value matches well with the value reported by Ederth et al [10][11][12] for 16 nm ITO particles after annealing in air at 500…”

Formation of metallic indium-tin phase from indium-tin-oxide nanoparticles under reducing conditions and its influence on the electrical properties

“…Samples which come close to the investigated type of the present study are found at Ederth et al 31,33 ͑Table I͒. Here, 600 nm thick spin-coated thin films of ITO nanoparticles ͑average diameter: 16 nm͒ were temperature treated in a technical vacuum of 0.2 mbar at 500°C.…”

“…At the same time an oxygen-depleted particle surface should form. The main difference between the experiments of Ederth et al 31,33 and this work is the reducing conditions since Ederth et al used a low oxygen partial pressure instead of a reducing forming gas. The detailed differences between these two methods are not yet clear.…”

“…They are usually described as annealing steps in a reducing or an oxidizing atmosphere or a sequence of both. For reducing atmospheres either forming gas 10,19,20,22,23,[26][27][28][29][30] or low oxygen partial pressures 1,14,17,26,[31][32][33][34][35][36] are used. Furthermore, plasma treatments [37][38][39] as well as wet-chemical treatments [40][41][42] are ways to influence ITO's surface properties.…”

Fabrication, charge carrier transport, and application of printable nanocomposites based on indium tin oxide nanoparticles and conducting polymer 3,4-ethylenedioxythiophene/polystyrene sulfonic acid

“…With increasing PEDOT content, also the conductivity of the hybrid ITO-PEDOT nanocomposites increases showing that both components contribute to the transport of charge carriers. The comparison between our present results and the best electrical conductivity values of approximately 120-130 X À1 cm À1 for nanoparticulate ITO thin films reported in the literature 37,45,46 shows that the hybrid ITO-PEDOT layers are very competitive despite the fact of a low-temperature fabrication process. The achieved cm À1 surpasses all of the previously presented values for films consisting of ITO nanoparticles, although those layers have been annealed at a minimum temperature of 500 C and additionally posttreated under reducing conditions in forming gas or vacuum.…”