1995
DOI: 10.1557/proc-396-587
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Thin Mo Films Deposited and Analyzed Using Sub-Kev Noble Gas Ions

Abstract: Using He+ as probe particles, we have studied point defects in Mo thin films (5-1000 Å) deposited without and with Ar+ ion beam assistance (0.2–22 eV per Mo atom). It is found that the net effect of the ion beam is to produce rather than to annihilate point defects. Ar incorporation is only slight (-10-4). Annealing of the films leads to the thermal production of polyvacancies.

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Cited by 10 publications
(5 citation statements)
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“…The use of thermal helium desorption spectrometry, which has been employed to study the defects in single crystals [5][6][7][8] and thin films, [28][29][30] has been extended to in situ monitoring of the morphological changes upon heating in thin Cu films ͑10-300Å͒ deposited on Mo(100). It was found that the Cu films on Mo(100) undergo an island formation on annealing, indicating that these films are metastable at the deposition temperature of 300 K. The island formation is very pronounced, resulting in islands covering ϳ15% of the surface and a continuous one-or twomonolayer Cu film remaining on the rest of the substrate.…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…The use of thermal helium desorption spectrometry, which has been employed to study the defects in single crystals [5][6][7][8] and thin films, [28][29][30] has been extended to in situ monitoring of the morphological changes upon heating in thin Cu films ͑10-300Å͒ deposited on Mo(100). It was found that the Cu films on Mo(100) undergo an island formation on annealing, indicating that these films are metastable at the deposition temperature of 300 K. The island formation is very pronounced, resulting in islands covering ϳ15% of the surface and a continuous one-or twomonolayer Cu film remaining on the rest of the substrate.…”
Section: Discussionmentioning
confidence: 99%
“…[27][28][29][30] The base pressure of the setup was Ͻ1.0ϫ 10 −9 mbar. [27][28][29][30] The base pressure of the setup was Ͻ1.0ϫ 10 −9 mbar.…”
Section: Methodsmentioning
confidence: 99%
“…12 The base pressure of the setup was 2.0ϫ 10 −10 torr ͑2.7ϫ 10 −8 Pa͒ after bakeout. Cu films ͑5 -200 Å͒ were deposited on a 0.05 m polished, polycrystalline Mo substrate ͑ 10.0ϫ 2.0 mm 2 , purity 99.95 wt %͒.…”
Section: Methodsmentioning
confidence: 99%
“…However, in the SEM we were unable to find argon even at the EDAX detection limit of about 0.2%. Moreover, it is known from the literature that, as a function of the argon-ion/molybdenum-atom arrival ratio, the concentration of argon will peak at an atomic concentration of about 10 −4 for a ratio between 0.03 and 0.08, and then decrease as this ratio increases due to re-sputtering of the implanted argon [48]. This means that for the EB films studied here, with argon-ion/molybdenum-atom arrival ratios of greater than 0.6, 0.01 at% argon is the maximum concentration we might expect based on the literature.…”
Section: Microstructurementioning
confidence: 99%