Thin-layer SIMOX for future applications

Anc, M.J.; Dolan, R.; Jiao, Jun; Nakai, Toshiro

doi:10.1109/soi.1999.819875

Cited by 3 publications

(1 citation statement)

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“…[4,5] Recently, low dose separation by implanted oxygen (SIMOX) technology has developed rapidly to improve the quality of the SIMOX wafers and to reduce the production costs. [6] The process is carried out in two steps: firstly a high-equality planar buried oxide (BOX) is obtained by implanting silicon at a much low dose of 4 × 10 17 cm −2 and thermally annealing at 1573 K. It is almost one-fifth of high-dose SIMOX; [7] Secondly, the BOX is further grown through the ITOX. [8] It is known that BOX thickness increases due to the oxygen diffusion into the wafer in an Ar/O 2 atmosphere, through a surface silicon-oxide layer and a superficial silicon layer.…”

Section: Introductionmentioning

confidence: 99%

Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator

Zhang

Wang

et al. 2008

Chinese Phys. B

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In the present work, a Cz–Silicon wafer is implanted with helium ions to produce a buried porous layer, and then thermally annealed in a dry oxygen atmosphere to make oxygen transport into the cavities. The formation of the buried oxide layer in the case of internal oxidation (ITOX) of the buried porous layer of cavities in the silicon sample is studied by positron beam annihilation (PBA). The cavities are formed by 15 keV He implantation at a fluence of 2 × 1016 cm−2 and followed by thermal annealing at 673 K for 30 min in vacuum. The internal oxidation is carried out at temperatures ranging from 1073 to 1473 K for 2 h in a dry oxygen atmosphere. The layered structures evolved in the silicon are detected by using the PBA and the thicknesses of their layers and nature are also investigated. It is found that rather high temperatures must be chosen to establish a sufficient flux of oxygen into the cavity layer. On the other hand high temperatures lead to coarsening the cavities and removing the cavity layer finally.

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Section: Introductionmentioning

confidence: 99%