Thin films of silicon on low-cost substrates. Final report

Sarma, Kalluri R.; Gurtler, R.W.; Baghdadi, A.; Cota, M.; Ramsey, W.C.

doi:10.2172/6113785

Cited by 2 publications

(4 citation statements)

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“…Even when higher stresses were d ev e l o p e d in "stuck" ribbons deposited at 1000~ b y cooling them to liquid nitrogen temperature, no shearing took place. As expected, the calculated stress levels were found to increase as the composite is cooled to lower temperatures from deposition temperature (13). Also, while the calculated stresses in the composite were found to be dependent on the relative thicknesses of the Mo substrate and the silicon ribbon, they were not found to correlate well with the shear separation observations.…”

Section: Discussionmentioning

confidence: 53%

Interaction of CVD Silicon with Molybdenum Substrates

Rice

Sarma

1981

J. Electrochem. Soc.

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Section: Discussionmentioning

confidence: 53%

Interaction of CVD Silicon with Molybdenum Substrates

Rice

Sarma

1981

J. Electrochem. Soc.

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“…6 for a substrate temperature of 1100~ and flow rate of 30 liters/min. For comparison, efficiencies calculated from thermodynamic equilibrium (1,3) are also plotted. Deposition enhancement by HPP is highest for lower concentrations.…”

Section: Silicon Tetrach~oride~table I Summarizes Resultsmentioning

confidence: 99%

“…The Ni-30Cr alloy group and 310 stainless steel alloys are representative of the nickel-base and ironbase alloys considered for use in coal gasifiers (2)(3)(4). Bradshaw and co-workers (5-7) have studied the effect of minor alloying additions on the corrosion resistance of these two alloys and have shown that titanium has a m a r k e d effect on improving corrosion resistance.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, devices for which silicon material cost is a major part of the total cost (e.g., solar cells) have provided an impetus for development of advanced technologies capable of reducing the cost of depositing silicon. We have been investigating a high pressure plasma (HPP) deposition process as a means for depositing polycrystalline silicon ribbons (films) at low cost (1)(2)(3)(4). Unlike many low pressure plasma processes used in the semiconductor industry that operate in the pressure range of few Torr, this HPP operates at a pressure near one atmosphere.…”

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confidence: 99%

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High Pressure Plasma (HPP) Deposition of Polycrystalline Silicon Ribbons

Sarma

Rice

1981

J. Electrochem. Soc.

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report the u.v. curing seems to be independent of whether the irradiations are performed in vacuum or in the atmosphere. Furthermore, infrared studies indicate that neither the carboxTlic acid (III) or the ester (V) are photochemically produced; instead the salt of the carboxylic acid (VI) is produced. Studies have shown that the origin of the salt formation is due to residual developer (KOH) left in the resist after development. Since the ketene (II) or the acid (III) reacts vigorously with bases then salt formation easily proceeds. The production of the potassium indene carboxylate salt in this manner renders the resist more resistant to flow at high temperature. SummaryA simple u.v. cure has been described whereby the high temperature flow resistance of the AZ class of resists is dramatically improved. The u.v. cure involves exposure of the imaged resist to light after development and appears to work under a variety of exposure conditions. The salient feature that makes the chem- AZ RESISTS 2647istry of the u.v. cure different from that normally found in the resist is that the potassium indene earboxylate salt is photochemically produced instead of the indene carboxylic acid.ABSTRACT A high pressure plasma (HPP) deposition process has been characterized for its potential in producing polycrystalline silicon films (ribbons) at low cost. Gas chromatographic (GC) analysis of HPP deposition reactor effluent gases has been used for characterizing the deposition process. Silicon tetrachloride, trichlorosilane, dichlorosilane, and silane have been evaluated as possible silicon source gases for silicon deposition by HPP. Deposition efficiencies have been determined under various experimental conditions such as rf power of HPP, concentration and flow rate of reactant gases, and substrate temperature. These efficiencies were found-to be higher than those obtained by a conventional chemical vapor deposition (CVD) process under all conditions of practical interest. The observed improvements in HPP silicon deposition may be explained using thermodynamics, operative kinetic processes, and deposition mechanisms. Economic potential of the HPP deposition process for producing silicon films appears favorable.

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Thin films of silicon on low-cost substrates. Final report

Cited by 2 publications

References 0 publications

Interaction of CVD Silicon with Molybdenum Substrates

Interaction of CVD Silicon with Molybdenum Substrates

High Pressure Plasma (HPP) Deposition of Polycrystalline Silicon Ribbons

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