High Pressure Plasma (HPP) Deposition of Polycrystalline Silicon Ribbons

Abstract

report the u.v. curing seems to be independent of whether the irradiations are performed in vacuum or in the atmosphere. Furthermore, infrared studies indicate that neither the carboxTlic acid (III) or the ester (V) are photochemically produced; instead the salt of the carboxylic acid (VI) is produced. Studies have shown that the origin of the salt formation is due to residual developer (KOH) left in the resist after development. Since the ketene (II) or the acid (III) reacts vigorously with bases then salt formation easily proceeds. The production of the potassium indene carboxylate salt in this manner renders the resist more resistant to flow at high temperature. SummaryA simple u.v. cure has been described whereby the high temperature flow resistance of the AZ class of resists is dramatically improved. The u.v. cure involves exposure of the imaged resist to light after development and appears to work under a variety of exposure conditions. The salient feature that makes the chem- AZ RESISTS 2647istry of the u.v. cure different from that normally found in the resist is that the potassium indene earboxylate salt is photochemically produced instead of the indene carboxylic acid.ABSTRACT A high pressure plasma (HPP) deposition process has been characterized for its potential in producing polycrystalline silicon films (ribbons) at low cost. Gas chromatographic (GC) analysis of HPP deposition reactor effluent gases has been used for characterizing the deposition process. Silicon tetrachloride, trichlorosilane, dichlorosilane, and silane have been evaluated as possible silicon source gases for silicon deposition by HPP. Deposition efficiencies have been determined under various experimental conditions such as rf power of HPP, concentration and flow rate of reactant gases, and substrate temperature. These efficiencies were found-to be higher than those obtained by a conventional chemical vapor deposition (CVD) process under all conditions of practical interest. The observed improvements in HPP silicon deposition may be explained using thermodynamics, operative kinetic processes, and deposition mechanisms. Economic potential of the HPP deposition process for producing silicon films appears favorable.

Aerosol reactor design: effect of reactor type and process parameters on product aerosol characteristics

“…Potential applications include the production of silicon (Flagan and Alam, 1982) and various ceramic powders (Sanders, 1984). On the other hand, in chemical vapor deposition processes, particle formation is undesirable and must be minimized (Murthy et al, 1976; Sarma and Rice, 1981).…”

Thermodynamics of the Silicon‐Chlorine‐Hydrogen System: Chemical Potential for Homogeneous Nucleation

“…Previous workers have performed similar calculations of equilibrium composition and equilibrium deposition efficiency over more restricted ranges [e.g., Ref. (12)], but have not reported chemical potential driving forces.…”

“…Previous workers [e.g., Ref. (12)] concerned only with epitaxial growth have not investigated chlorosilane concentrations (in hydrogen) of more than a few percent.…”

“…The degradation behavior of fl-and ~'-alumina electrolytes in Na]S cells has been studied by several investigators, and various mechanisms have been proposed. Notable among these mechanisms are impurity diffusion (1-4), dendritic penetration of metallic sodium during charge (5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15), and electron injection (16). However, little attention has been paid to the thermodynamic stability of these electrolytes in Na/S cells.…”

Features of Plasma-Chemical Hydrogen Reduction of Volatile Silicon and Germanium Chlorides in rf-arc Discharge

“…In [21], a microwave discharge of atmospheric pressure in a mixture of SiCl4 with H2 and Ar at a pressure of 26 to 40 kPa was used to obtain SiHCl3. In [22,23], TCS was obtained in an arc, and in [24] in a highfrequency (13.56 MHz) plasmatron. It should be noted that the content of impurities in STC is at the level of purity of the initial TCS.…”