2022
DOI: 10.1039/d1ma00578b
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Thin films of electron donor–acceptor complexes: characterisation of mixed-crystalline phases and implications for electrical doping

Abstract: For electron donor–acceptor complexes a link will be established between optical, structural and vibrational properties of EDA complexes as well as the electrical doping by them.

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Cited by 3 publications
(6 citation statements)
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References 99 publications
(204 reference statements)
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“…The functionality of virtually all organic and hybrid (opto-)electronic devices depends on interface energetics, and a thorough understanding of energy-level alignment mechanisms at organic-metal and organic-organic interfaces is indispensable for further efficiency improvements [1][2][3][4][5]. For example, the energy-level offset at the donor-acceptor interface in organic photovoltaic devices is crucial for exciton dissociation [6][7][8]; chemisorbed molecular monolayers on metals can tune the substrate work functions by an interfacial charge transfer [9,10] and allow, consequently, to lower charge injection barriers into electrodes [11,12]. The number of organic materials used for optoelectronic applications is virtually unlimited [13,14] and energy-level diagrams (ELDs) are frequently used to choose the best material for a given purpose [4,15].…”
Section: Introductionmentioning
confidence: 99%
“…The functionality of virtually all organic and hybrid (opto-)electronic devices depends on interface energetics, and a thorough understanding of energy-level alignment mechanisms at organic-metal and organic-organic interfaces is indispensable for further efficiency improvements [1][2][3][4][5]. For example, the energy-level offset at the donor-acceptor interface in organic photovoltaic devices is crucial for exciton dissociation [6][7][8]; chemisorbed molecular monolayers on metals can tune the substrate work functions by an interfacial charge transfer [9,10] and allow, consequently, to lower charge injection barriers into electrodes [11,12]. The number of organic materials used for optoelectronic applications is virtually unlimited [13,14] and energy-level diagrams (ELDs) are frequently used to choose the best material for a given purpose [4,15].…”
Section: Introductionmentioning
confidence: 99%
“…The most significant observation is, however, the emergence of a new peak at q z = 0.33 Å –1 for 11 mol % concentration that becomes prominent for the largest dopant ratio studied and corresponds to an associated interlayer spacing of ∼1.90 nm. This peak is absent in the single-component films of either C 8 -BTBT or F 6 TCNNQ. , In analogy to the cocrystal structure reported for C 8 -BTBT-F 4 TCNQ , and C 10 -BTBT/F 4 TCNQ, the new peak is labeled (001) C , being attributed to the formation of cocrystals consisting of an alternated stacking C 8 -BTBT-F 6 TCNNQ. The 1:1 mixed structure is driven by the interaction of the respective conjugated cores of the acceptor and OSC.…”
Section: Resultsmentioning
confidence: 54%
“…This peak is absent in the single-component films of either C 8 -BTBT or F 6 TCNNQ. 26,33 In analogy to the cocrystal structure reported for C 8 -BTBT-F 4 TCNQ 34,35 and C 10 -BTBT/F 4 TCNQ, 25 the new peak is labeled (001) C , being attributed to the formation of cocrystals consisting of an alternated stacking C 8 -BTBT-F 6 TCNNQ. The 1:1 mixed structure is driven by the interaction of the respective conjugated cores of the acceptor and OSC.…”
Section: ■ Experimental Methodsmentioning
confidence: 75%
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“…38,39 These changes enable a series of electronic transitions in SY, giving rise to a new spectral feature at 545 nm. 40,41 Upon biasing the HC-OLEFETs, electrons and holes will transport and accumulate at the SY interface (Figure 1d). These accumulated electrons have low mobility and long transit time, leading to enhanced capture efficiency in SY.…”
Section: ■ Results and Discussionmentioning
confidence: 99%