Ground-state integer charge transfer is commonly regarded as the basic mechanism of molecular electrical doping in both, conjugated polymers and oligomers. Here, we demonstrate that fundamentally different processes can occur in the two types of organic semiconductors instead. Using complementary experimental techniques supported by theory, we contrast a polythiophene, where molecular p-doping leads to integer charge transfer reportedly localized to one quaterthiophene backbone segment, to the quaterthiophene oligomer itself. Despite a comparable relative increase in conductivity, we observe only partial charge transfer for the latter. In contrast to the parent polymer, pronounced intermolecular frontier-orbital hybridization of oligomer and dopant in 1:1 mixed-stack co-crystallites leads to the emergence of empty electronic states within the energy gap of the surrounding quaterthiophene matrix. It is their Fermi–Dirac occupation that yields mobile charge carriers and, therefore, the co-crystallites—rather than individual acceptor molecules—should be regarded as the dopants in such systems.

Molecular doping: The standard model for molecular p-doping of organic semiconductors (OSCs) assumes integer charge transfer between OSC and dopant. This is in contrast to an alternative model based on intermolecular complex formation instead. By systematically varying the acceptor strength it was possible to discriminate the two models. The latter is clearly favored, suggesting strategies for the chemical design of more efficient molecular dopants.

Small‐molecule photovoltaic cells using diindenoperylene (DIP) as a new donor material in combination with the fullerene C60 as an electron acceptor are demonstrated. In addition to the successful application in planar and bulk heterojunction devices, a comprehensive analysis including structural studies, the determination of the energy level alignment and electrical transport investigations is given, stressing the correlation between growth conditions, film morphology, and device performance. Due to pronounced crystallinity and a large surface area of DIP films grown at elevated temperature, exceptionally high fill factors of almost 75% are achieved in planar heterojunction cells. Bulk heterojunctions exhibit large‐scale phase separation forming a bicontinuous network of both molecular species, which enables efficient exciton dissociation and charge carrier transport. The high ionization potential of DIP and the favorable energy level alignment with the fullerene C60 yield large open circuit voltages close to 1 V and comparable power conversion efficiencies of about 4% in both cell architectures.

In organic photovoltaic (PV) cells, the well‐established donor‐acceptor (D/A) concept enabling photo‐induced charge transfer between two partners with suitable energy level alignment has proven extremely successful. Nevertheless, the introduction of such a heterojunction is accompanied with additional energy losses as compared to an inorganic homojunction cell, owing to the presence of a charge‐transfer (CT) state at the D/A interface. Based on the principle of detailed balance, a modified Shockley‐Queisser theory is developed including the essential effects of interfacial CT states, that allows for a quantitative assessment of the thermodynamic efficiency limits of molecular D/A solar cells. Key parameters, apart from the optical gap of the absorber material, entering the model are the energy (ECT) and relative absorption strength (αCT) of the CT state. It is demonstrated how the open‐circuit voltage (VOC) and thus the power conversion efficiency are affected by different parameter values. Furthermore, it is shown that temperature dependent device characteristics can serve to determine the CT energy, and thus the upper limit of VOC for a given D/A combination, as well as to quantify non‐radiative recombination losses. The model is applied to diindenoperylene (DIP)‐based photovoltaic devices, with open‐circuit voltages between 0.9 and 1.4 V, depending on the partner, that have recently been reported.

The film morphology and device performance of planar heterojunction solar cells based on the molecular donor material α-sexithiophene (6T) are investigated. Planar heterojunctions of 6T with two different acceptor molecules, the C 60 fullerene and diindenoperylene (DIP), have been prepared. The growth temperature of the 6T bottom layer has been varied between room temperature and 100 °C for each acceptor. By means of X-ray diffraction and X-ray absorption, we show that the crystallinity and the molecular orientation of 6T is influenced by the preparation conditions and that the 6T film templates the growth of the subsequent acceptor layer. These structural changes are accompanied by changes in the characteristic parameters of the corresponding photovoltaic cells. This is most prominently observed as a shift of the open circuit voltage (V oc ): In the case of 6T/C 60 heterojunctions, V oc decreases from 0.4 to 0.3 V, approximately, if the growth temperature of 6T is increased from room temperature to 100 °C. By contrast, V oc increases from about 1.2 V to almost 1.4 V in the case of 6T/DIP solar cells under the same conditions. We attribute these changes upon substrate heating to increased recombination in the C 60 case while an orientation dependent intermolecular coupling seems to change the origin of the photovoltaic gap in the DIP case.