Thin Films of Copper (I) Iodide Doped with Iodine and Thiocyanate

DeSilva, L. Ajith; Harwell, Joshua; Gaquere-Parker, Anne C.; Perera, A. G. U.; Tennakone, K.

doi:10.1002/pssa.201700520

Cited by 14 publications

(15 citation statements)

References 27 publications

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“…Considering the easy generation of V i during the film coating/annealing processes due to its low formation energy, thiocyanate (SCN − ) was blended into CuI to stabilize the lattice iodine and form smooth and compact composite films. [ 114 , 115 , 116 ] By creating an I‐rich environment during reactive sputtering, the CuI film conductivity increased from 156 to 283 S cm −1 . [ 102 ] The same phenomenon was observed using the solution process by directly adding iodine solution into the CuI precursor, leading to a conductivity enhancement of more than two orders of magnitude.…”

Section: Cui Introduction Deposition Method and Electrical Property Modulationmentioning

confidence: 99%

Engineering Copper Iodide (CuI) for Multifunctional p‐Type Transparent Semiconductors and Conductors

et al. 2021

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Developing transparent p-type semiconductors and conductors has attracted significant interest in both academia and industry because metal oxides only show efficient n-type characteristics at room temperature. Among the different candidates, copper iodide (CuI) is one of the most promising p-type materials because of its widely adjustable conductivity from transparent electrodes to semiconducting layers in transistors. CuI can form thin films with high transparency in the visible light region using various low-temperature deposition techniques. This progress report aims to provide a basic understanding of CuI-based materials and recent progress in the development of various devices. The first section provides a brief introduction to CuI with respect to electronic structure, defect states, charge transport physics, and overviews the CuI film deposition methods. The material design concepts through doping/alloying approaches to adjust the optoelectrical properties are also discussed in the first section. The following section presents recent advances in state-of-the-art CuI-based devices, including transparent electrodes, thermoelectric devices, p-n diodes, p-channel transistors, light emitting diodes, and solar cells. In conclusion, current challenges and perspective opportunities are highlighted.

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Section: Cui Introduction Deposition Method and Electrical Property Modulationmentioning

confidence: 99%

Engineering Copper Iodide (CuI) for Multifunctional p‐Type Transparent Semiconductors and Conductors

et al. 2021

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“…[1,[16][17][18] However, doping attempts with iodine, exploiting the intrinsic defects, are inconclusive and seemingly dependent on the growth technique. [19][20][21] Recent results of PLD grown CuI capped with amorphous Al 2 O 3 suggest an extrinsic influence on the electrical properties. [22] In particular, the incorporation of oxygen acceptors in combination with diffusion through the Al 2 O 3 capping dominates the conductivity.…”

Section: Introductionmentioning

confidence: 99%

p‐Type Doping and Alloying of CuI Thin Films with Selenium

Storm

Bär

Selle

et al. 2021

Physica Rapid Research Ltrs

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The impact of the intentional selenium doping of CuI thin films is investigated concerning crucial crystalline, electrical and optical properties. For selenium contents in between 0.1 at.% and 1 at.%, the carrier density can be systematically adjusted by the selenium supply during growth between cm and cm while transparency and crystallinity remain unaffected. By temperature‐dependent Hall‐effect measurements, a carrier freeze out is observed and the binding energy of the selenium dopant is determined. The long‐term electrical stability in combination with cappings is significantly improved compared to undoped or oxygen doped CuI. However, for selenium contents exceeding 1 at.%, major crystalline changes are observed that are presumably correlated to a phase transformation. Transmission and electrical measurements suggest that the solubility limit of Se in CuI is about 1 at.% since a degradation of the transparency and decreasing free hole densities are observed for Se contents exceeding 1 at.%. Hence, the doping limit for Se in CuI corresponds to 1 at.%.

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“…For instance, the electrical and luminescence properties of Zn 2+ ‐doped CuI and properties of Li + ‐doped CuI were investigated separately while more possible dopants, like Ga and Al, still remain theoretical . And CuI film doped with excessive anions, such as iodine and thiocyanate, was also reported . Recently, p‐type transparent amorphous Cu‐Sn‐I film was prepared by spin‐coating of 2‐methoxyethanol solution of CuI and annealing in Ar atmosphere, and the addition of Sn 4+ acts as an inhibitor of fast crystallization and a stabilizer of CuI structure .…”

Section: Introductionmentioning

confidence: 99%

Solution‐Processed Transparent Sn⁴⁺‐Doped CuI Hybrid Photodetectors with Enhanced Performances

Liu

Zhang

Yang

et al. 2019

Adv Materials Inter

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Herein, Sn4+‐doped copper (I) iodide (CuI) is prepared via a facile, cost‐efficient solution process, and the properties of Sn4+‐doped CuI, including morphology, crystalline phase, as well as optical and electrical properties, are investigated by varying the Sn4+ concentration. And by constructing transparent Sn4+‐CuI/ZnO hybrid UV photodetectors, the potential of Sn4+‐CuI as a p‐type material for high‐performance photodetection is investigated. It is found that Sn4+ doping has great effect on the morphology as the formation of Sn4+‐CuI thin sheets is observed, and the resistivity of Sn4+‐CuI could be tuned by controlling Sn4+ addition. The Sn4+‐CuI/ZnO hybrid photodetectors exhibit obviously enhanced photodetecting performance outperforming ZnO film and CuI/ZnO photodetectors by the same preparation method, including significantly improved on/off ratio, spectral responsivity, and shortened responsive time. The enhanced performance of Sn4+‐CuI/ZnO hybrid photodetectors mainly arises from the formation of type‐II p‐Sn4+‐CuI/n‐ZnO heterojunctions, and the better interface contact leads to higher carrier separation efficiency due to the existence of Sn4+‐CuI thin sheets. And the improved performance is also related to the optimized resistivity of Sn4+‐CuI. This study sheds light on the potential of doped CuI toward transparent, high‐performance photodetectors in the future.

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Thin Films of Copper (I) Iodide Doped with Iodine and Thiocyanate

Cited by 14 publications

References 27 publications

Engineering Copper Iodide (CuI) for Multifunctional p‐Type Transparent Semiconductors and Conductors

Engineering Copper Iodide (CuI) for Multifunctional p‐Type Transparent Semiconductors and Conductors

p‐Type Doping and Alloying of CuI Thin Films with Selenium

Solution‐Processed Transparent Sn⁴⁺‐Doped CuI Hybrid Photodetectors with Enhanced Performances

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Thin Films of Copper (I) Iodide Doped with Iodine and Thiocyanate

Cited by 14 publications

References 27 publications

Engineering Copper Iodide (CuI) for Multifunctional p‐Type Transparent Semiconductors and Conductors

Engineering Copper Iodide (CuI) for Multifunctional p‐Type Transparent Semiconductors and Conductors

p‐Type Doping and Alloying of CuI Thin Films with Selenium

Solution‐Processed Transparent Sn4+‐Doped CuI Hybrid Photodetectors with Enhanced Performances

Contact Info

Product

Resources

About

Solution‐Processed Transparent Sn⁴⁺‐Doped CuI Hybrid Photodetectors with Enhanced Performances