Thin films in the integrated circuit industry: requirements and deposition methods

Granneman, E. H. A.

doi:10.1016/0040-6090(93)90552-z

Cited by 62 publications

(21 citation statements)

References 16 publications

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“…Fluoropolymers have many desirable properties, such as high thermal stability, low dielectric constants and low dissipation factors, and surface inertness, which make them ideal for microelectronic and optical applications [1,2]. Previous studies of the metallization of fluoropolymers demonstrated that both surface defluorination and the formation of metal carbide species contribute to metal adhesion [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Fluoropolymer surface modification for enhanced evaporated metal adhesion

Shi¹,

Selmani²,

Martinů

et al. 1994

Journal of Adhesion Science and Technology

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Adhesion of evaporated Cu to Teflon PFA (polytetrafluoroethylene-co-perfluoroalkoxy vinyl ether) was greatly enhanced by plasma pretreatment. The efficiency of the treatment decreased in the following order: N2 > O2 > (N2 + H2) > (O2 + H2) > H2. X-ray photoelectron spectroscopy (XPS) showed the loss of fluorine and the incorporation of oxygen and nitrogen at the polymer surface. Among the gases, H2 was found to be the most efficient for fluorine elimination, and (N2 + H2) for surface functionalization. Based on this investigation, it is proposed that Cu reacts with both oxygen and nitrogen to form, respectively, Cu-O and Cu-N bonds at the interface but no reaction occurs with carbon and fluorine. While greater enhancement in polymer surface wettability and stronger interfacial reactions can account for the higher performance of N2 over O2 in improving adhesion, these effects cannot explain the lower efficiency of H2. Several possibilities are discussed, including surface cleaning, oxygen incorporation and the formation of weak boundary layers.

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Section: Introductionmentioning

confidence: 99%

Fluoropolymer surface modification for enhanced evaporated metal adhesion

Shi¹,

Selmani²,

Martinů

et al. 1994

Journal of Adhesion Science and Technology

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“…With the mean free path of gas molecules varying from 0:1 mm at atmospheric pressure to around 1 mm at pressures of 10 Pa, this scale cannot be described with continuum models, and a molecular approach must be used. The main focus in feature-scale CVD modeling has been on the prediction of the conformality of deposited films [50].…”

Section: Feature Scale Cvd Modelsmentioning

confidence: 99%

Multi-scale modeling of chemical vapor deposition processes for thin film technology

Kleijn

Dorsman

Kuijlaars

et al. 2007

Journal of Crystal Growth

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“…12 For this reason other techniques such as sputtering or chemical vapor depositions are used in industrial applications. 12 We show here that the capability of IBAD to modify the microstructure of Al films could also reflect in the improvement of the step coverage. Figure 6 reports TEM crosssectional views relative to the coverage of artificially stepped substrates: standard evaporation ͓Fig.…”

Section: Step Coveragementioning

confidence: 99%

Ion beam assisted deposition of Al films on Si

Terrasi

Ravesi

Marcellino

et al. 1995

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Mechanical properties and residual stress in AlN/Al mixed films prepared by ion-beam-assisted depositionIon beam assisted deposition ͑IBAD͒ was used to grow thin Al films ͑ϳ100 nm thick͒ onto Si substrates at room temperature. Al was deposited by electron gun evaporation, while an Ar ϩ ion beam bombarded the film during the growth. Ion beam energies of 300, 500, and 650 eV were used, with current densities ranging between 4 and 20 A/cm 2 . Polycrystalline Al films have been obtained, whose structural properties were strictly related to the IBAD parameters ͑ion current and energy͒. Samples were analyzed by transmission electron microscopy and Rutherford backscattering spectrometry, pointing out the following effects: ͑1͒ IBAD produces smaller polycrystalline Al grains with respect to a film evaporated in standard high vacuum conditions; ͑2͒ the Al grain size decreases by increasing the ion current or decreasing the ion energy; ͑3͒ sputtering yields during IBAD are higher with respect to a postdeposition bombardment process, and show an inverse trend with the ion beam energy. Results have been explained in terms of modification of kinetics of growth induced by IBAD. A simple model is also proposed to take into account the unexpected result about the sputtering yield. Finally, the IBAD capability to modify the microstructure of the Al films was used to improve the coverage of artificially stepped substrates.

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Thin films in the integrated circuit industry: requirements and deposition methods

Cited by 62 publications

References 16 publications

Fluoropolymer surface modification for enhanced evaporated metal adhesion

Fluoropolymer surface modification for enhanced evaporated metal adhesion

Multi-scale modeling of chemical vapor deposition processes for thin film technology

Ion beam assisted deposition of Al films on Si

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