Thin-Film Transistors with Polycrystalline Silicon Prepared by  a New Annealing Method

Nam, Kyoung Won; Song, Yinglin; Baek, Jong Tae; Kong, Hoyoul; Lee, Sang-Soo

doi:10.1143/jjap.32.1908

Cited by 14 publications

(3 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Since the laser-induced nucleation centers in the seed layer are formed from the molten stage as a result of excimer laser irradiation, they are very clear and free from any defective point. When the second layer of thicker ␣-Si film is deposited and then crystallized via the second step short-time furnace annealing, silicon grains will grow around these clear nucleation centers, resulting in crystallized grains with very few in-grain defect states, 16,17 which are beneficial to the device's electrical characteristics. On the other hand, the performance of the ELA poly-Si TFTs is superior to that of the NTSA poly-Si TFTs.…”

Section: Resultsmentioning

confidence: 99%

“…Thus, the uniformity of device characteristics for the poly-Si TFTs using the NTSA scheme is comparable to that using the SPC scheme. 17 Table II shows the qualitative comparison of different crystallization schemes for the fabrication of LTP poly-Si TFTs. The conventional SPC scheme produces excellent uniform distribution of grain size, but the device performance and the production throughput are not quite satisfactory.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

A Novel Two-Step Annealing Technique for the Fabrication of High Performance Low Temperature Poly-Si TFTs

Fan

Chen

Chang

2003

J. Electrochem. Soc.

View full text Add to dashboard Cite

Low temperature processed ͑LTP͒ poly-Si thin film transistors ͑TFTs͒ fabricated with a poly-Si film crystallized by a novel two-step annealing ͑NTSA͒ technique were investigated and compared with those using conventional solid phase crystallization ͑SPC͒ and excimer laser annealing ͑ELA͒ schemes. The NTSA scheme is characterized by the combination of an excimer laser induced formation of nucleation centers and a short-time low temperature furnace annealing ͑about 6 h at 600°C͒ creating clear crystalline grains with very few in-grain defects. The LTP poly-Si TFTs fabricated with a NTSA poly-Si film not only exhibit a better performance but also significantly shorten the crystallization time as compared to those fabricated using the conventional SPC ͑about 20 h or longer at 600°C͒. In addition, the uniformity of the device characteristics for the devices using the NTSA scheme is superior to that using the ELA scheme and is comparable to that using the SPC scheme.There is an increasing interest in the use of low temperature processed ͑LTP͒ polycrystalline silicon thin film transistors ͑poly-Si TFTs͒ for application in large-area display electronics, such as active matrix liquid crystal displays 1 ͑AMLCDs͒ and active matrix organic light-emitting displays 2 ͑AMOLEDs͒. It is well known that one of the most critical steps in the fabrication of high performance LTP poly-Si TFTs is the transformation of amorphous silicon ͑␣-Si͒ active area into poly-Si. Generally, the poly-Si film used in the fabrication of TFTs has been traditionally obtained from ␣-Si film by solid phase crystallization ͑SPC͒, conducted at relatively low crystallization temperatures ͑about 600°C͒ for the fabrication of devices on a low cost glass substrate. SPC is a widely used scheme because of its simplicity and low cost as well as its ability to produce a smooth interface and excellent uniform film with a high reproducibility. 3,4 Unfortunately, SPC process at 600°C usually require a long anneal time of 20-60 h to ensure the formation of poly-Si films with large grain size, making it unattractive for manufacturing. 4,5 In addition, poly crystals made in this manner have a high density of in-grain defects due to low crystallization temperatures, which may deteriorate the electrical properties of the LTP poly-Si TFTs. 4-6 Thus, various measures have been employed to shorten the crystallization time as well as improve the device performance for the LTP poly-Si TFTs. [6][7][8][9] Excimer laser annealing ͑ELA͒ has been actively investigated as an alternative method for the crystallization of ␣-Si films. 10,11 The major advantages of this technique are the formation of polysilicon grains with excellent structural quality and the ability to process selected areas without thermal damage to the glass substrate. However, the grain size of less than 100 nm as a result of extremely high solidification velocity inherent to the ELA process has been a troublesome problem. In addition, nonuniformity of laserrecrystallized poly-Si films may arise due to laser beam o...

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

A Novel Two-Step Annealing Technique for the Fabrication of High Performance Low Temperature Poly-Si TFTs

Fan

Chen

Chang

2003

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…Multistep annealing is well suited to the above requirement [12]. A short high-temperature step is used to nucleate the film, followed by a low-temperature step to maximize grain size.…”

Section: A Solid-phase Crystallizationmentioning

confidence: 99%

Controlled two-step solid-phase crystallization for high-performance polysilicon TFT's

Subramanian

Dankoski

Degertekin

et al. 1997

IEEE Electron Device Lett.

View full text Add to dashboard Cite

Abstract-Solid-phase crystallization for polysilicon thin-film transistors (TFT's) is generally limited by a tradeoff between throughput and device performance. Larger grains require lower crystallization temperatures, and hence, longer crystallization times. In this letter, a novel crystallization technique is presented which increases both throughput and device performance, using a two-step process, controlled using an in situ acoustic temperature/crystallinity sensor. A high-temperature rapid thermal annealing (RTA) nucleation step is followed by a low-temperature grain growth step to grow large-grain polysilicon. TFT's have been fabricated with a substantial improvement in throughput and device performance. This promises a high-throughput, highperformance, spatially uniform TFT process.

show abstract

Investigation of structural modification, surface chemical states, and luminescence behavior of rapid thermal annealing treated MgTiO3 thin films

Negi

Shyam

Shekhawat

et al. 2023

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Thin-Film Transistors with Polycrystalline Silicon Prepared by a New Annealing Method

Cited by 14 publications

References 8 publications

A Novel Two-Step Annealing Technique for the Fabrication of High Performance Low Temperature Poly-Si TFTs

A Novel Two-Step Annealing Technique for the Fabrication of High Performance Low Temperature Poly-Si TFTs

Controlled two-step solid-phase crystallization for high-performance polysilicon TFT's

Investigation of structural modification, surface chemical states, and luminescence behavior of rapid thermal annealing treated MgTiO3 thin films

Contact Info

Product

Resources

About