Thin-Film Transistors With Amorphous Indium–Gallium-Oxide Bilayer Channel

Yang, Chen-Chuan; Chang, Shoou‐Jinn; Chang, T. H.; Wei, Chi-Yu; Juan, Yen-Ming; Chiu, C. J.; Weng, W. Y.

doi:10.1109/led.2017.2685619

Cited by 18 publications

(7 citation statements)

References 21 publications

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“…In this case, the interface between the dielec-tric and channel is the same for all these samples, while the only difference is the high-R IGZO layer. The counterclockwise hysteresis has also been reported in bilayer InGaO TFTs with a 10-nm-thick front channel layer and 40-nm-thick back channel layer, [37] where the thickness of both layers is close to that of the 4+60 sample. ZnO/ZnMgO field-effect transistors with two-dimensional electron gas in the ZnO channel also exhibit counterclockwise hysteresis.…”

Section: Resultssupporting

confidence: 53%

Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors

Huo¹,

Lu²,

Han³

et al. 2019

Chinese Phys. B

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Dual-active-layer (DAL) amorphous InGaZnO (IGZO) thin-film transistors (TFTs) are fabricated at low temperature without post-annealing. A bottom low-resistance (low-R) IGZO layer and a top high-resistance (high-R) IGZO layer constitute the DAL homojunction with smooth and high-quality interface by in situ modulation of oxygen composition. The performance of the DAL TFT is significantly improved when compared to that of a single-active-layer TFT. A detailed investigation was carried out regarding the effects of the thickness of both layers on the electrical properties and gate bias stress stabilities. It is found that the low-R layer improves the mobility, ON/OFF ratio, threshold voltage and hysteresis voltage by passivating the defects and providing a smooth interface. The high-R IGZO layer has a great impact on the hysteresis, which changes from clockwise to counterclockwise. The best TFT shows a mobility of 5.41 cm 2 /V•s, a subthreshold swing of 95.0 mV/dec, an ON/OFF ratio of 6.70 × 10 7 , a threshold voltage of 0.24 V, and a hysteresis voltage of 0.13 V. The value of threshold voltage shifts under positive gate bias stress decreases when increasing the thickness of both layers.

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Section: Resultssupporting

confidence: 53%

Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors

Huo¹,

Lu²,

Han³

et al. 2019

Chinese Phys. B

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“…Various approaches have been taken to solve the above challenge, such as doping, modification of components, addition of additives, and novel post-treatments [9,[18][19][20]. However, electron transport properties are still hindered by these defect-prone oxides [21][22][23][24][25].…”

Section: Introductionmentioning

confidence: 99%

Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors

Zhao

Zhu

et al. 2020

Nanomaterials

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Thin-film transistors (TFTs) made of metal oxide semiconductors are now increasingly used in flat-panel displays. Metal oxides are mainly fabricated via vacuum-based technologies, but solution approaches are of great interest due to the advantages of low-cost and high-throughput manufacturing. Unfortunately, solution-processed oxide TFTs suffer from relatively poor electrical performance, hindering further development. Recent studies suggest that this issue could be solved by introducing a novel heterojunction strategy. This article reviews the recent advances in solution-processed heterojunction oxide TFTs, with a specific focus on the latest developments over the past five years. Two of the most prominent advantages of heterostructure oxide TFTs are discussed, namely electrical-property modulation and mobility enhancement by forming 2D electron gas. It is expected that this review will manifest the strong potential of solution-based heterojunction oxide TFTs towards high performance and large-scale electronics.

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“…In contrast, in some reports, a bilayer structure, which consists of a highly conductive thin layer as a front channel and semiconducting thick layer as a back channel, was used to improve the stability of TFT devices. [15][16][17] However, the bilayer structure would lead to complexity in TFT device fabrication.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Negative‐Bias Illumination Temperature Stability of Praseodymium‐Doped InGaO Thin‐Film Transistors

Zhu

et al. 2021

Physica Status Solidi (a)

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The performance of praseodymium-doped indium gallium oxide (PrIGO) as the channel layer of thin-film transistors (TFTs) is widely investigated. The TFTs with Pr doping exhibit a remarkable suppression of the light-induced instability including a negligible photoresponse and significant enhancement in negative gate bias stress under illumination (NBITS). The structure, chemical composition, and oxygen vacancy concentration of PrIGO films are analyzed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. In addition, the low-frequency noise test is introduced to analyze the variation of trap density with Pr doping. The results indicate that the trap states induced by Pr doping facilitate the capture of free electrons by positively charged oxygen vacancies under illumination, which leads to the suppression of photoinduced carriers in the conduction band.

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Thin-Film Transistors With Amorphous Indium–Gallium-Oxide Bilayer Channel

Cited by 18 publications

References 21 publications

Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors

Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors

Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors

Enhanced Negative‐Bias Illumination Temperature Stability of Praseodymium‐Doped InGaO Thin‐Film Transistors

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