Thin film transistors for displays on plastic substrates

Lee, M.J; Judge, C. P.; Wright, S. W.

doi:10.1016/s0038-1101(00)00067-8

Cited by 37 publications

(24 citation statements)

References 7 publications

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“…[9][10][11][12][13][14] This advantage, however, makes the semiconductor microstructure dependent on many variables, including the chemistry and morphology of the dielectric upon which it is deposited. The roughness of the dielectric in particular is expected to strongly influence organic semiconductor microstructure because it influences the carrier mobility in organic field-effect transistors (OFETs), [15][16][17][18][19][20] which is strongly dependent on microstructure.…”

Section: Introductionmentioning

confidence: 99%

“…Understanding how dielectric roughness influences the microstructure and electrical performance of organic semiconductors is therefore a necessary first step towards the adoption of low-cost and flexible substrates, which are required to fully realize the benefits of organic semiconductors. [11][12][13][14]21,22] Early studies on the impact of roughness on semiconductor morphology have generally focused on vapor-deposited small molecules such as pentacene. In these systems, the chargecarrier mobility generally decreases with increasing dielectric roughness, with a corresponding reduction of grain size.…”

Section: Introductionmentioning

confidence: 99%

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The Effect of Interfacial Roughness on the Thin Film Morphology and Charge Transport of High‐Performance Polythiophenes

Jung

Kline

Fischer

et al. 2008

Adv Funct Materials

127

112

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We control and vary the roughness of a dielectric upon which a high‐performance polymer semiconductor, poly(2,5‐bis(3‐alkylthiophen‐2‐yl)thieno[3,2‐b]thiophene) (pBTTT) is cast, to determine the effects of roughness on thin‐film microstructure and the performance of organic field‐effect transistors (OFETs). pBTTT forms large, well‐oriented terraced domains with high carrier mobility after it is cast upon flat, low‐surface‐energy substrates and heated to a mesophase. Upon dielectrics with root‐mean square (RMS) roughness greater than 0.5 nm, we find significant morphological changes in the pBTTT active layer and significant reductions in its charge carrier mobility. The pBTTT films on rough dielectrics exhibit significantly less order than those on smooth dielectrics through characterization with atomic force microscopy and X‐ray diffraction. This critical RMS roughness implies that there exists a condition at which the pBTTT domains no longer conform to the local nanometer‐scale curvature of the substrate.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The Effect of Interfacial Roughness on the Thin Film Morphology and Charge Transport of High‐Performance Polythiophenes

Jung

Kline

Fischer

et al. 2008

Adv Funct Materials

127

112

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“…Electronic devices such as solar cells, thin-film transistors and detectors have been fabricated on thin films of CdSe [1][2][3]. The distribution of grain size and other structural and morphological properties of the films strongly affect the performance and reliability of active devices fabricated on such layers.…”

Section: Introductionmentioning

confidence: 99%

Effect of substrate temperature and post‐deposition annealing on the properties of evaporated CdSe thin films

Bacaksız¹,

Başol²,

Altunbaş

et al. 2007

Physica Status Solidi (b)

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The structural, morphological and optical properties of vacuum-evaporated CdSe thin films were investigated as a function of the substrate temperature and the post-deposition annealing conditions. It was observed that the grain sizes and morphologies of as-deposited layers were similar for substrate temperatures of 100 and 200 K. However, CdSe films produced at a substrate temperature of 300 K had substantially different surface morphology. Annealing at 473 -673 K in air did not cause any appreciable grain growth in any of the films irrespective of their growth temperature. However, annealing at 673 K initiated intergrain coalescence and altered surface morphology by reducing faceting. X-ray diffraction studies showed that the crystallinity of the CdSe films was improved upon annealing. The optical band gap energy values were obtained and two direct transitions were observed. This may be attributed to spin orbit splitting of the valence band. Resistivity measurements indicated that annealing at 673 K in air forms a highly resistive compensated CdSe film. The results showed that although the substrate temperature during growth plays the major role in determining the properties of deposited films, post-deposition annealing at temperatures of at least 673 K may lead to further changes in these properties.

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“…Most research has been directed toward finding compatible high-temperature substrates [6]or high-performance electronic materials with low processing temperatures [5] [8]. Another approach is to combine the good electrical performance of nanofibers into flexible substrates.…”

Section: Introductionmentioning

confidence: 99%

Transport involving conducting fibers in a non-conducting matrix

Hansel

Rozen

Walker

2010

International Journal of Thermal Sciences

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I. ABSTRACTThermal and electrical transport through a low-conductivity matrix containing high-conductivity fibers is important to several applications including flexible thin-film transistors, PEM fuel cells, and direct energy-conversion devices. Nanofibers can limit thermal transport through phonon confinement and boundary scattering while maintaining high electrical conductivity. The substrate will not contribute to electrical performance but may participate in thermal transport. The net result is a material whose Lorenz number can be tuned by loading the matrix with fibers. The purpose of the present work is to investigate the effectiveness of several transport models in the context of two-dimensional fiber composites and to compare the thermal and electrical transport through a given material as a function of the conductivity ratio and the fiber density. Three models will be considered and compared: 1)discretized solutions, 2) equivalent resistance, and 3)effective medium approximation. In the case of electrical transport, where the conductivity of the fiber is presumably many orders of magnitude larger than the matrix, the second model provides a fast and reliable way to predict conductance of the combined system. However, if the two materials are similar in conductivity, the second model fails to accurately capture the conductivity. Thermal transport is predicted using the discretized model because the conductivity ratio is nonnegligible. The third model is an analytic approximation based on Maxwell's equation and is used to predict both types of transport through a compound with inclusions of ellipsoidal geometry. This model works well for low fiber densities but predicts lower conductivity for high fiber-densities because the analytic solution fails to account for fiber overlap. II. INTRODUCTIONThermal and electrical transport through a low-conductivity matrix containing high-conductivity fibers is important to several applications including flexible thin-film transistors (TFT) [4], proton exchange membranes (PEM) [11], and directenergy conversion devices [1].For flexible TFTs, low-temperature processes are required to prevent destruction of the substrate, but most semiconductors with good electrical performance require hightemperature processing [12]. Most research has been directed toward finding compatible high-temperature substrates [6]or high-performance electronic materials with low processing temperatures [5] [8]. Another approach is to combine the good electrical performance of nanofibers into flexible substrates. In fact, Biercuk et al. [2] have shown that nanotube/epoxy composites percolate at 0.1-0.2 wt% loading. This feature suggests that composite materials may retain the flexibility while providing good electrical performance with low processing temperatures. In direct energy conversion devices, particularly Peltier devices, high electrical conductivity and low thermal conductivity are preferred for superior performance [3]. However, most materials do not exhibit both of these properties si...

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Thin film transistors for displays on plastic substrates

Cited by 37 publications

References 7 publications

The Effect of Interfacial Roughness on the Thin Film Morphology and Charge Transport of High‐Performance Polythiophenes

The Effect of Interfacial Roughness on the Thin Film Morphology and Charge Transport of High‐Performance Polythiophenes

Effect of substrate temperature and post‐deposition annealing on the properties of evaporated CdSe thin films

Transport involving conducting fibers in a non-conducting matrix

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