Abstract:In a solar cell: stainless steel/SnS/CdS/ZnO/ZnO:Al, we report conversion efficiency of 1.28%, open-circuit voltage (V oc ) of 0.470 V, and short-circuit current density (J sc ) of 6.2 mA cm À2 , measured on cells of area 1 cm 2 under standard conditions. The thin film of SnS absorber of 550 nm in thickness used in this cell was deposited from a chemical bath. Average crystalline diameter of the material is 24 nm, and its X-ray diffraction pattern fits a cubic unit cell with cube edge of 1.159 nm. The optical … Show more
“…This observation is a reaffirmation of the first results on the large cubic cell for SnS thin films reported in Ref. for the XRD pattern recorded in the 2 θ interval 10–70°. Extended 2 θ interval in Fig.…”
Section: Crystalline Structure Of Sns‐cub and Sns‐ort Thin Filmssupporting
confidence: 90%
“…Hence, such cells would not be commercially viable . The best solar cell of this type has so far (in 2015) reached η of only 1.28%, J sc of 6.2 mA cm −2 , and V oc of 0.470 V . For SnS‐ORT absorbers, J sc would approach 40 mA cm −2 for large thickness but the V oc for the best SnS‐ORT solar cell has been 0.390 V or below in 2014 .…”
Section: Optical Absorption and Light‐generated Current Densitymentioning
The tin sulfide solar cell has acquired prominence in recent years. We present the characteristics of two polymorphs of SnS and their perspectives in thin‐film solar cells. Thin‐film SnS with cubic crystalline structure (SnS‐CUB) was obtained via two chemical routes. This semiconductor is distinct from the more common SnS thin films of orthorhombic crystalline structure (SnS‐ORT), also obtained by chemical routes. The SnS‐CUB reported here with a lattice constant a of 11.587 Å replaces the zinc blende structure previously reported for this material with a of 5.783 Å. Thin films of SnS‐CUB have an optical bandgap (Eg) of 1.66–1.72 eV and electrical conductivity (σ) of 10−6 Ω−1 cm−1. These characteristics distinguish them from SnS‐ORT presented here with an Eg of 1.1 eV and σ typically higher by two orders of magnitude. We discuss the uncertainties that have prevailed in the assignment of crystalline structure for SnS‐CUB and SnS‐ORT. The optical and electrical properties of these two polymorphs of SnS are contrasted in the context of light‐generated current density in solar cells. We conclude that the two SnS polymorphs when considered together as optical absorbers offer wider prospects for tin sulfide thin‐film solar cells.
“…This observation is a reaffirmation of the first results on the large cubic cell for SnS thin films reported in Ref. for the XRD pattern recorded in the 2 θ interval 10–70°. Extended 2 θ interval in Fig.…”
Section: Crystalline Structure Of Sns‐cub and Sns‐ort Thin Filmssupporting
confidence: 90%
“…Hence, such cells would not be commercially viable . The best solar cell of this type has so far (in 2015) reached η of only 1.28%, J sc of 6.2 mA cm −2 , and V oc of 0.470 V . For SnS‐ORT absorbers, J sc would approach 40 mA cm −2 for large thickness but the V oc for the best SnS‐ORT solar cell has been 0.390 V or below in 2014 .…”
Section: Optical Absorption and Light‐generated Current Densitymentioning
The tin sulfide solar cell has acquired prominence in recent years. We present the characteristics of two polymorphs of SnS and their perspectives in thin‐film solar cells. Thin‐film SnS with cubic crystalline structure (SnS‐CUB) was obtained via two chemical routes. This semiconductor is distinct from the more common SnS thin films of orthorhombic crystalline structure (SnS‐ORT), also obtained by chemical routes. The SnS‐CUB reported here with a lattice constant a of 11.587 Å replaces the zinc blende structure previously reported for this material with a of 5.783 Å. Thin films of SnS‐CUB have an optical bandgap (Eg) of 1.66–1.72 eV and electrical conductivity (σ) of 10−6 Ω−1 cm−1. These characteristics distinguish them from SnS‐ORT presented here with an Eg of 1.1 eV and σ typically higher by two orders of magnitude. We discuss the uncertainties that have prevailed in the assignment of crystalline structure for SnS‐CUB and SnS‐ORT. The optical and electrical properties of these two polymorphs of SnS are contrasted in the context of light‐generated current density in solar cells. We conclude that the two SnS polymorphs when considered together as optical absorbers offer wider prospects for tin sulfide thin‐film solar cells.
“…Solar cells of SnS‐ORT thin films prepared by thermal evaporation or atomic layer deposition have reached solar energy to electric energy conversion efficiency ( η ) of 3.88–4.63% in 2014. In the meantime, an alternate crystalline form (polymorph) of SnS has come up, which as nanocrystals or in thin films , is now assigned a simple cubic crystalline structure (CUB) with a large unit cell. Its lattice constant is a = 11.59 Å in thin films or in nanocrystals .…”
Tin selenide thin film with a simple cubic crystalline structure (SnSe-CUB) of unit cell dimension a ¼ 11.9632 Åis obtained via chemical deposition on a tin sulfide (SnS-CUB) thin film base layer of simple cubic structure of a ¼ 11.5873 Å. The SnSe-CUB films obtained this way are thermally stable while heating to 300 8C. Its optical band gap is 1.4 eV. A thin film of 200 nm in thickness of this material in a solar cell may lead to a light generated current density of 23 mA cm À2 and a maximum of 29 mA cm À2 . Thin film of SnSe-CUB possesses p-type electrical conductivity of 5 Â 10 À5 V À1 cm À1 , which is three orders of magnitude lower than that of SnSe films of orthorhombic crystalline structure. Overall, these characteristics make SnSe-CUB thin film a novel solar cell absorber material.
“…15 The cubic phase has reported optical bandgaps ranging from 1.6 to 1.8 eV, 11,13,17 and has been used to make a working solar cell. 18 Starting from the reported crystal structure parameters, we performed a local optimization of the structure (lattice vectors and internal positions) within density-functional theory (DFT) following a quasi-Newton minimization procedure. The equilibrium (DFT/PBEsol) lattice constant of 11.506 Å compares well to the value determined from X-ray diffraction at room temperature (11.603 Å).…”
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