Tin selenide thin film with a simple cubic crystalline structure (SnSe-CUB) of unit cell dimension a ¼ 11.9632 Åis obtained via chemical deposition on a tin sulfide (SnS-CUB) thin film base layer of simple cubic structure of a ¼ 11.5873 Å. The SnSe-CUB films obtained this way are thermally stable while heating to 300 8C. Its optical band gap is 1.4 eV. A thin film of 200 nm in thickness of this material in a solar cell may lead to a light generated current density of 23 mA cm À2 and a maximum of 29 mA cm À2 . Thin film of SnSe-CUB possesses p-type electrical conductivity of 5 Â 10 À5 V À1 cm À1 , which is three orders of magnitude lower than that of SnSe films of orthorhombic crystalline structure. Overall, these characteristics make SnSe-CUB thin film a novel solar cell absorber material.