Tin‐Based Novel Cubic Chalcogenides: A New Paradigm for Photovoltaic Research

Rehman, Sajid Ur; Butt, Faheem K.; Tariq, Zeeshan; Li, Chuanbo

doi:10.1002/9781119407690.ch5

Cited by 3 publications

(3 citation statements)

References 41 publications

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“…Indirect to direct bandgap transitions can be induced by applying electric field or under low strain on the system 53 due to a small difference between indirect and direct bandgap. Most interestingly, in these newly discovered cubic chalcogenides, indirect to direct bandgap transitions could be possibly beneficial for field effect transistors 54,55 and optoelectronic applications 56,57 . The comparison between GGA and HSE03 bandgaps is presented in Figure 2E.…”

Section: Resultsmentioning

confidence: 99%

“…Most interestingly, in these newly discovered cubic chalcogenides, indirect to direct bandgap transitions could be possibly beneficial for field effect transistors 54,55 and optoelectronic applications. 56,57 The comparison between GGA and HSE03 bandgaps is presented in Figure 2E. Moreover, the bandgaps trend for both GGA(PBE) and HSE03 can be seen in Figure S4, which follows the following order, that is, GeS > SnS > GeSe > SnSe and GeS > GeSe > SnS > SnSe for GGA and HSE03, respectively.…”

Section: Electronic Propertiesmentioning

confidence: 94%

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Elucidating the role of lattice thermal conductivity in π‐phases of IV‐VI monochalcogenides for highly efficient thermoelectric performance

Rehman

Butt

Tariq

et al. 2020

Intl J of Energy Research

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Recently, an emerging new class of cubic π-polymorphs are being pursued as cost-effective and relatively less toxic materials for thermoelectric, photovoltaic, and optoelectronic applications. Using density functional formalism and semiclassical Boltzmann transport theory, we have systematically studied the thermoelectric performance of π-polymorphs. Hybrid functional (HSE03) is employed to realize accurate energy bandgaps, which helps to predict more accurate thermoelectric properties. The thermodynamic stability is observed by binding energies and phonon dispersions. It is observed that the Seebeck coefficients (S) are decreasing and electrical conductivities (σ) are increasing with carrier concentration. However, thermal conductivities are showing decreasing trends which lead to ultimately increased ZT. π-GeSe shows a high power factor $16.50 mW/mK 2 among all π-polymorphs. The figure of merit, ZT value, of π-SnS, π-SnSe, π-GeS, and π-GeSe are found to be 0.83, 1.20, 1.28, and 1.63 with optimal carrier concentration at 800 K. The present work highlights the potential of newly discovered cubic π-polymorphs of chalcogenides for highly efficient thermoelectric materials.

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Section: Resultsmentioning

confidence: 99%

Section: Electronic Propertiesmentioning

confidence: 94%

Elucidating the role of lattice thermal conductivity in π‐phases of IV‐VI monochalcogenides for highly efficient thermoelectric performance

Rehman

Butt

Tariq

et al. 2020

Intl J of Energy Research

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“…The surge in the interest of indium chalcogenide nanomaterials has mainly been fueled by their recognition as alternative candidates against giants in the field of photovoltaics and sustainable energy solutions, such as cadmium chalcogenides which are known for their toxicity issues albeit achieving high performance and efficiency in metal chalcogenide-based semiconductor solar cells and other optoelectronic applications [6]. There are other less-to-non-toxic candidates which have been identified, such as antimony [7] and tin [8] chalcogenides, among others. However, indium chalcogenides contain a broad spectrum of crystallographic phases/species which exhibit unique properties attributed to different atomic compositions and crystal lattice orientation (polymorphism), contrary to antimony and tin chalcogenides.…”

Section: Introductionmentioning

confidence: 99%

Indium Chalcogenide Nanomaterials in the Forefront of Recent Technological Advancements

Masikane¹,

Revaprasadu²

2021

Post-Transition Metals

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In the last decade, there has been an increasing trend in the exploitation of indium chalcogenides in various applications which range from water splitting reactions in renewable energy to degradation of dyes in environmental rehabilitation. This trend is attributed to the interesting and unique properties of indium chalcogenide nanomaterials which can be easily tuned through a common approach: particle size, shape and morphology engineering. In this chapter, we outline the preferred attributes of indium chalcogenide nanomaterials which are deemed suitable for recent applications. Furthermore, we explore recent reaction protocols which have been reported to yield good quality indium chalcogenide nanomaterials of multinary configurations, e.g. binary and ternary compounds, among others.

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Cubic Germanium monochalcogenides (π-GeS and π-GeSe): Emerging materials for optoelectronic and energy harvesting devices

et al. 2019

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Tin‐Based Novel Cubic Chalcogenides: A New Paradigm for Photovoltaic Research

Cited by 3 publications

References 41 publications

Elucidating the role of lattice thermal conductivity in π‐phases of IV‐VI monochalcogenides for highly efficient thermoelectric performance

Elucidating the role of lattice thermal conductivity in π‐phases of IV‐VI monochalcogenides for highly efficient thermoelectric performance

Indium Chalcogenide Nanomaterials in the Forefront of Recent Technological Advancements

Cubic Germanium monochalcogenides (π-GeS and π-GeSe): Emerging materials for optoelectronic and energy harvesting devices

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