IEEE International Frequency Control Sympposium and PDA Exhibition Jointly With the 17th European Frequency and Time Forum, 200
DOI: 10.1109/freq.2003.1275190
|View full text |Cite
|
Sign up to set email alerts
|

Thin film resonator technology

Abstract: The thin film resonator technology has been under development for over forty years in one form or another. Although the basic approach is derived from the desire to reach higher frequencies than those readily achieved by thinning bulk crystals, there have always been competing technologies or fundamental material or processing problems that have impeded the development. Finally, a point was reached in the wireless market wherein competing technologies appeared unable to meet the demands of modern wireless appl… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
28
0

Publication Types

Select...
5
3

Relationship

0
8

Authors

Journals

citations
Cited by 37 publications
(28 citation statements)
references
References 63 publications
0
28
0
Order By: Relevance
“…Along with the low-cost miniaturization trend as well as the need in increasing operation frequency of modern communication systems, acoustoelectric bulk acoustic wave (BAW) devices with improved insertion loss, temperature stability, power handling capability, electrostatic discharge protection, selectivity and mechanical quality factor, are very likely to take the place of discrete SAW components, particularly represented by the breakthrough in miniaturization of frequency-selective devices brought from thin-film bulk acoustic resonator (which is bulk micromachined, offering excellent temperature stability), solidly mounted resonator and high overtone bulk acoustic resonator technology. Many reviews are available on technology and devices of SAW and BAW, including design process, modeling, fabrication, as well as marketing application [512,513,514,515], etc .…”
Section: Applicationsmentioning
confidence: 99%
“…Along with the low-cost miniaturization trend as well as the need in increasing operation frequency of modern communication systems, acoustoelectric bulk acoustic wave (BAW) devices with improved insertion loss, temperature stability, power handling capability, electrostatic discharge protection, selectivity and mechanical quality factor, are very likely to take the place of discrete SAW components, particularly represented by the breakthrough in miniaturization of frequency-selective devices brought from thin-film bulk acoustic resonator (which is bulk micromachined, offering excellent temperature stability), solidly mounted resonator and high overtone bulk acoustic resonator technology. Many reviews are available on technology and devices of SAW and BAW, including design process, modeling, fabrication, as well as marketing application [512,513,514,515], etc .…”
Section: Applicationsmentioning
confidence: 99%
“…The thin film electroacoustic (TEA) [1] technology has gained considerable attention in the sensors field during the last decade. TEA sensors offer resolutions comparable and sometimes even better than their bulk crystal counterparts [2], while providing easier integration and compact sizes.…”
Section: Introductionmentioning
confidence: 99%
“…To overcome these limitations, steeper and lower loss RF filter profiles are required [1,2]. There have been great demands for the BAW devices as RF filters and duplexers in mobile communication systems for its several prominent advantages such as high Qfactor, high power handling capability, high operating frequency, good temperature stability, and the possibility of being fabricated above IC [3,4]. BAW resonators utilize the acoustic resonant characteristics of longitudinal direction of piezoelectric film such as AlN or ZnO.…”
Section: Introductionmentioning
confidence: 99%