1989
DOI: 10.1557/jmr.1989.0815
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Thin-film reactions of Al with Co, Cr, Mo, Ta, Ti, and W

Abstract: The thin-film interactions of Al with refractory metals (Co, Cr, Mo, Ta, Ti, and W) have been investigated. The composition and thickness of the reacted aluminide layers were determined by Rutherford backscattering and phase identification was made by x-ray diffraction. Scanning electron microscopy was used to examine the lateral uniformity. The initial aluminide phases to grow are the Al-rich phases: Co2Al9, Cr2Al13, MoAl12, TaAl3, TiAl3, and WAI12. These are the most Al-rich phases on the phase diagrams. The… Show more

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Cited by 45 publications
(16 citation statements)
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“…TiAl 3 has been identified as the single dominant phase which forms during the heating of Ti-Al diffusion couples [19][20][21][22][23][24]. This observation has been explained on the basis of the higher diffusivity of aluminum ions in TiAl 3 in comparison with other aluminides, which in any case might be formed in small amounts [23].…”
Section: Introductionmentioning
confidence: 99%
“…TiAl 3 has been identified as the single dominant phase which forms during the heating of Ti-Al diffusion couples [19][20][21][22][23][24]. This observation has been explained on the basis of the higher diffusivity of aluminum ions in TiAl 3 in comparison with other aluminides, which in any case might be formed in small amounts [23].…”
Section: Introductionmentioning
confidence: 99%
“…9) could be a consequence of chemical reactions, for example between Ta and Cu 29 or Ta and Al. 30 However, since thermal emittance was affected significantly, reactions with the Cu substrate are more likely to be the reason.…”
Section: Discussionmentioning
confidence: 99%
“…[61][62][63][64]. These phenomena degrade the adhesion of the overlayer and impedes later alloying (62)(63). This a subject of great concern for researches about:…”
Section: Surface Texturingmentioning
confidence: 99%