Thin Film Piezoelectric Aluminum Nitride for Piezoelectric Micromachined Ultrasonic Transducers

Stoeckel, Chris; Meinel, Katia; Melzer, Marcel; Otto, Thomas

doi:10.1109/icsens.2018.8589845

Cited by 5 publications

(5 citation statements)

References 10 publications

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“…These conditions rule out the utilization of molecular beam epitaxy [8] or metal organic vapor phase epitaxy [9] along with the choice of the substrates naturally having close lattice constants or similar thermal expansion coefficients, such as SiC, [10] Al 2 O 3 , [11] or MgO. [12] Among more technologically suitable substrates, metallic surfaces promoting the lateral migration of atoms, for instance, Pt(111), [13,14] Al(111), [15,16] Mo(110), [17] or even graphene [18,19] and silicon surfaces, [20][21][22][23][24][25] can be highlighted. In the latter case, the level of technological compatibility is the highest as well as the challenges related to the growth due to a large lattice mismatch of about 23.4% [26] and nonmatching lateral coefficients of thermal expansion: 5.3 Â 10 À6 K À1 for AlN versus 3.6 Â 10 À6 K À1 in the case of Si.…”

Section: Introductionmentioning

confidence: 99%

The Limits of the Post‐Growth Optimization of AlN Thin Films Grown on Si(111) via Magnetron Sputtering

Solonenko

Schmidt

Stoeckel

et al. 2019

Physica Status Solidi (b)

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Hexagonal aluminium nitride (AlN) thin films prepared by the reactive magnetron sputtering method usually undergo post-growth annealing treatment aimed at the improvement of crystalline quality as a principal step for their performance as piezoelectric transducers in micro-electro-mechanical systems. Herein, the post-growth annealing of AlN films deposited on Si (111) is investigated by Raman and Fourier transform infrared spectroscopies, X-ray diffraction, and scanning probe microscopies. The thermally treated films show a positive trend in stress relaxation via annealing up to 1200 C; however, it is accompanied by a dewetting of the quasi-epitaxial layer and the formation of the cubic AlN phase. The critical role is played by the AlN/Si interface being sensitive to oxidation via interstitial oxygen in Si wafers. The piezoelectric performance of the AlN/Si system is found to be inversely proportional to the post-growth annealing temperature.

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Section: Introductionmentioning

confidence: 99%

The Limits of the Post‐Growth Optimization of AlN Thin Films Grown on Si(111) via Magnetron Sputtering

Solonenko

Schmidt

Stoeckel

et al. 2019

Physica Status Solidi (b)

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“…The effective coupling coefficient (K 2 eff ) (Stoeckel et al, 2018) is an important parameter to analyze the performance of the FBAR; K 2 eff characterizes the energy conversion efficiency of the piezoelectric thin films under the influence of the adjacent structures. The effective coupling coefficient of the FBAR is given by:…”

Section: Design and Fabrication Of Film Bulk Acoustic Resonatormentioning

confidence: 99%

Structure-Size Optimization and Fabrication of 3.7 GHz Film Bulk Acoustic Resonator Based on AlN Thin Film

Jiang

Shiping

et al. 2021

Front. Mater.

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Traditional radio frequency filters cannot meet the demands of miniaturization, high frequency operation, integration, and broadband capacity in new-generation communication system owing to their larger volumes. A thin film bulk acoustic resonator (FBAR) is therefore suggested as an optimum solution because of its small volume and a good performance. In this study, the COMSOL multiphysics software was used to build 2 D and 3 D finite element models to analyze the harmonic characteristics of the FBAR. Based on the optimized structural parameters, the FBAR was fabricated with series resonant frequency, parallel resonant frequency, and effective coupling coefficient values of 3.705, and 3.82 GHz, and 7.4%, respectively. Compared with the simulated FBAR results, the effective coupling coefficient of the fabricated FBAR declined by only 0.1%, almost achieving the desired performance.

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“…It consists of 1 µm thermal oxide (SiO2), 100 nm physical vapor deposition platinum and 600 nm AlN grown from the platinum layer which acts as seed layer and contact layer at same time. Top electrodes are formed by aluminum (Al) [9]. With this small layer thickness, the membrane deflects depending on hydrostatic pressure [9].…”

Section: A Reflective Membranementioning

confidence: 99%

“…Top electrodes are formed by aluminum (Al) [9]. With this small layer thickness, the membrane deflects depending on hydrostatic pressure [9]. Due to the reflective properties of platinum and SiO2 respectively, the pressure sensor may also be used as passive, pressure depending FFPI cavity without electrical actuation.…”

Section: A Reflective Membranementioning

confidence: 99%

Pressure Sensor Catheter based on Micromachined Aluminum Nitride Membrane Fiber Tip Fabry-Pérot-Interferometer

Friedemann

Meinel

Voigt

et al. 2021

2021 International Conference on Applied Electronics (AE)

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This paper introduces an absolute pressure sensor based on an extrinsic fiber-optic Fabry-Pérot-Interferometer molded into a silicone catheter. The interferometer principle is formed between the tip of an optical fiber and a reflective multilayer membrane containing aluminum nitride. The signal analysis is done by a Fiber Bragg Grating interrogation device. First, the optical sensing principle as pressure sensor in an invasive catheter with a diameter of 1 mm is described. Then, the dependence of the optical signal on changes of hydrostatic pressure and ambient temperature is shown. Out of these characteristics it was possible to evaluate the pressure sensor catheter for potential application in the human vascular system.

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Thin Film Piezoelectric Aluminum Nitride for Piezoelectric Micromachined Ultrasonic Transducers

Cited by 5 publications

References 10 publications

The Limits of the Post‐Growth Optimization of AlN Thin Films Grown on Si(111) via Magnetron Sputtering

The Limits of the Post‐Growth Optimization of AlN Thin Films Grown on Si(111) via Magnetron Sputtering

Structure-Size Optimization and Fabrication of 3.7 GHz Film Bulk Acoustic Resonator Based on AlN Thin Film

Pressure Sensor Catheter based on Micromachined Aluminum Nitride Membrane Fiber Tip Fabry-Pérot-Interferometer

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