The Limits of the Post‐Growth Optimization of AlN Thin Films Grown on Si(111) via Magnetron Sputtering

Solonenko, Dmytro; Schmidt, Constance; Stoeckel, Chris; Hiller, Karla; Zahn, Dietrich R. T.

doi:10.1002/pssb.201900400

Cited by 16 publications

(13 citation statements)

References 71 publications

(115 reference statements)

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“…The frequency of the E 2 (high) band in the pristine AlN thin film is lower by 2:5 cm À1 than the value of bulk material, 657:4 cm À1 , reported by Davydov et al [41]. The frequency difference is attributed to the internal tensile strain naturally appearing in thin films prepared by reactive magnetron sputtering [38,42]. The inverse relation between the phonon lifetime and the fullwidth at half maximum (FWHM) of a corresponding Raman peak allows the crystal quality of thin films to be assessed [43].…”

Section: Resultsmentioning

confidence: 79%

Co-sputtering of $$\hbox {Al}_{1-x}\hbox {Sc}_{x}\hbox {N}$$ thin films on Pt(111): a characterization by Raman and IR spectroscopies

et al. 2020

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In this work, aluminium scandium nitride ($$\hbox {Al}_{1-x}\hbox {Sc}_{x}\hbox {N}$$ Al 1 - x Sc x N ) thin films are deposited by reactive DC magnetron co-sputtering on Pt(111) layers. The sputtering power of the Sc target is varied in a broad range up to 900 W to effectively vary the Sc content later assessed using energy-dispersive X-ray spectroscopy (EDX). We show that commonly used X-ray diffraction techniques may yield ambiguous results, and thus, additional verification is crucial to substantiate the actual composition of the sputtered thin films. Therefore, we employ optical spectroscopy techniques, such as Raman and Fourier transformed infra-red (FTIR) spectroscopies in order to study the vibrational properties of the alloys. Our Raman spectra show that low Sc content leads to a phase separation with the formation of cubic ScN and AlScN phases during the sputtering process. Nevertheless, small amounts of the wurtzite phase are detected in the rock-salt dominated samples owing to the enhancement of the $$\hbox {A}_{{1}}$$ A 1 (LO) phonon mode by the Berreman effect in the FTIR spectra. The Sc-induced shifts of the AlN phonon modes are determined in a broad range of Sc content.

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Section: Resultsmentioning

confidence: 79%

Co-sputtering of $$\hbox {Al}_{1-x}\hbox {Sc}_{x}\hbox {N}$$ thin films on Pt(111): a characterization by Raman and IR spectroscopies

et al. 2020

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“…68,69 The band around 12 µm (∼833 cm −1 ) is assigned to the Si-N bond, which is possibly created due to the diffusion of Si atoms into the AlN matrix. 70 The other feature observed around 13.5 µm (∼741 cm −1 ) arise from the native oxides of the substrates. 54,71 In addition, it is possible that longitudinal optical (LO) phonon mode 12 of Al-N and stretching Al-O mode contribute to the features around 13.5 and 11.3 µm (∼885 cm −1 ), respectively.…”

Section: Fig 3 Ftir Experimental and Fitted Reflection For Sputtered Aln Films With Various Thicknessesmentioning

confidence: 96%

Thickness-dependent optical properties of aluminum nitride films for mid-infrared wavelengths

Beliaev

Shkondin

Lavrinenko

et al. 2021

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…Figure 2 c demonstrates that the 2 θ value of (002) diffraction peak increases linearly with the increase in annealing temperature and annealing time. This result illustrates that the defects were repaired step by step within 1000 °C [ 17 , 18 , 19 , 20 ]. However, the (002) diffraction peak returns to a smaller value when annealing at 1000 °C for 80 min, which is due to the fact that some lattice defects were repaired at 1000 °C, but a higher annealing temperature or a longer holding time may generate new lattice defects.…”

Section: Resultsmentioning

confidence: 93%

Fabrication of Weak C-Axis Preferred AlN Thin Film for Temperature Measurement

Dong

et al. 2021

Sensors

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A weak C-axis preferred AlN thin film with a lot of defects was fabricated for temperature measurement. It was found that the (002) diffraction peak of the thin film increased monotonously with the increase in annealing temperature and annealing time. This phenomenon is ascribed to the evolution of defects in the lattice of the AlN film. Therefore, the relationship between defects and annealing can be expressed by the offset of (002) diffraction peak, which can be used for temperature measurement. Furthermore, a temperature interpretation algorithm Equation based on the lattice parameter (2θ), annealing temperature and annealing time was established, and a temperature interpretation software was built with MATLAB. Visual temperature interpretation is realized by the software, and the relative error is less than 7%. This study is of great significance for promoting the accurate temperature measurement on the surface of high temperature component.

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The Limits of the Post‐Growth Optimization of AlN Thin Films Grown on Si(111) via Magnetron Sputtering

Cited by 16 publications

References 71 publications

Co-sputtering of $$\hbox {Al}_{1-x}\hbox {Sc}_{x}\hbox {N}$$ thin films on Pt(111): a characterization by Raman and IR spectroscopies

Co-sputtering of $$\hbox {Al}_{1-x}\hbox {Sc}_{x}\hbox {N}$$ thin films on Pt(111): a characterization by Raman and IR spectroscopies

Thickness-dependent optical properties of aluminum nitride films for mid-infrared wavelengths

Fabrication of Weak C-Axis Preferred AlN Thin Film for Temperature Measurement

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