Thin-Film Lateral SOI PIN Diodes for Thermal Sensing Reaching the Cryogenic Regime

Abstract

This paper presents the performance of lateral SOI PIN diodes for temperature sensing in the range of 100 K to 400 K. Experimental results indicate that PIN diodes can be used to implement temperature sensors with high accuracy in cryogenic regime, provided that a suitable temperature range is chosen for calibration. Numerical simulations using Atlas two-dimensional simulator were performed in order to confirm this hypothesis and extend the analysis, verifying the accuracy of the existing model.

A highly stable temperature sensor based on Au/Cu/n-Si Schottky barrier diodes dependent on the inner metal thickness

“…It has been reported that the maximum current sensitivity to temperature changes can be observed in SCs where TE takes place [9][10][11][12][13][14][15][16][19][20][21][22][23][24][25][26][27][28][29][30][31][32]. Therefore, we should first look at whether the current flow through the present SBDs corresponds to TE.…”

“…Perez et al [23] reported that the V-T curve for a bias current of 2.5 A cm −2 had a linear variation with an α value of 1.6 mV K −1 for diamond SBDs in the 300-440 K range. de Souza et al [24] presented an analysis of the performance of lateral PIN diodes for temperature sensing from 100 K up to 400 K [24] and reported that the α value of their all diodes increased with decreasing forward current, in agreement with the data reported in [25]. Chopra and Dharmadurai [25] found that the thermal sensitivity value increased from 2.07 mV K −1 at 1 mA to 2.76 mV K −1 at 10 µA from the linear V-T curves of the diodes in the temperature range 4 to 100 K.…”

“…A thermally sensitive surface-barrier structure has direct contact with the ambient in contrast to semiconductor devices such as p-n junctions and transistors, and changes in the state of this structure influence its device properties. Therefore, it has been proposed that SBDs could be used for designing temperature, pressure and atmospheric gas composition sensors [19][20][21][22][23][24][25][26][27]. MS temperature sensors can be counted among the most useful devices for analysis of physical and chemical processes in a wide range of industries and research such as automotive, medical, aviation, space, nuclear, metallurgical fields.…”

“…Essentially, an analog temperature sensor converts the ambient temperature into a voltage reading, which can then be sensed by an analog pin of a microcontroller. SBD sensors are preferentially biased at a constant forward current level offering a linear voltagetemperature (V-T) behavior when these sensors are used a temperature sensors [19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34].…”

“…The desire for careful and accurate temperature monitoring of the efficient performance of various systems has recently led to the use of Si diode temperature sensors in a wide variety of applications. Use of Si thermal diodes as absolute temperature sensors in integrated circuit temperature measurements is preferred due to their predictability, linearity and stability over a wide range [19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34]. There have been a number of studies related to thermal sensitivity.…”