A highly stable temperature sensor based on Au/Cu/n-Si Schottky barrier diodes dependent on the inner metal thickness

Abstract

We have fabricated the Au/n-Si (D1), Au/Cu/n-Si (D2), Au/Cu(4nm)/n-Si (D3) and Au/Cu(2nm)/n-Si (D4) Schottky-barrier diodes (SBDs). The thickness of the Cu Schottky contact (SC) films for the D2, D3, and D4 diodes has been chosen as 100, 4 and 2 nm, respectively. We have investigated the thermal sensitivity from the voltage-temperature (V-T) characteristics of the SBDs at different current levels. The V-T measurements have been made in the temperature range from 10 K to 320 K with steps of 2 K, at the different current levels from 50 nA to 141.70 µA. The V-T curves have shown a good linearity degree for all SBDs. The slope dV/dT = α or thermal sensitivity coefficient α for each diode has decreased with increasing current level from 50 nA to 141.70 µA. But, it has been seen that the SBDs with the Cu SC have approximately the same α value as independent of metal thickness at the same current level. That is, the thermal sensitivity coefficient value has changed approximately from 2.48 mV/K at 50 nA to 1.82 at 141.70 µA for the SBDs with Cu Schottky contact as independent metal thickness. Furthermore, the α versus current level plots of the diodes have exhibited a linear behavior. The intercept α0 and slope dα/dI values of the α versus current level plots have been obtained as 2.80 mV/K and -0.0843 mV/(AK) for D2, and 2.85 mV/K and -0.092 mV/(AK) for D3 and 2.83 mV/K and -0.0876 mV/(AK) for D4. These values are very close to each other and the difference between the slope (dα/dI) values is small enough to be neglected.

Anomalous Nernst Effect in Flexible Co-Based Amorphous Ribbons

“…Although a wide range of physical and chemical phenomena has been explored for sensor applications in recent years, special attention was paid to the materials which can demonstrate the ability to be employed in multifunctional devices, as well as materials having stable properties with respect to special environmental conditions. For instance, the change in the electrical resistance of nanostructures has a great appeal for temperature, gas, and humidity sensors [ 15 , 16 , 17 , 18 ]. Furthermore, changes in electrical voltage can be used for magnetic and electrical field sensors [ 19 , 20 , 21 , 22 ], including magnetic field sensors working in principle on the magnetoimpedance effect (GMI) [ 23 , 24 , 25 , 26 , 27 ] and being one of the most efficient types of the sensors for obtaining the high sensitivity for room temperature applications.…”

High Performance of Metallic Thin Films for Resistance Temperature Devices with Antimicrobial Properties

“…The non-contact type sensors, which are based on thermal emission of electromagnetic radiation, are used mainly in research and development fields. The contact type sensor includes thermocouples, thermistors, and RTDs which are based on the Seebeck effect, temperature-sensitive electrical resistance, and positive/negative temperature coefficient of electrical resistance, respectively, [ 6 , 7 , 8 , 9 , 10 , 11 ]. At present, thermocouples and thermistors are most widely used in industry.…”