2009 34th IEEE Photovoltaic Specialists Conference (PVSC) 2009
DOI: 10.1109/pvsc.2009.5411288
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Thin film III–V solar cells on Mo foil

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Cited by 6 publications
(4 citation statements)
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“…The fabrication of these devices will require the continued development of CSVT for the deposition of p-type GaAs as well as window-layer materials such as GaAs 1-x P x . Because the use of single-crystal GaAs wafers as growth substrates is prohibitively expensive for practical solar energy conversion applications, understanding and controlling the growth of CSVT GaAs on non-lattice-matched substrates such as Si [3] or Mo metal foils [13] is also important.…”
Section: Discussionmentioning
confidence: 99%
“…The fabrication of these devices will require the continued development of CSVT for the deposition of p-type GaAs as well as window-layer materials such as GaAs 1-x P x . Because the use of single-crystal GaAs wafers as growth substrates is prohibitively expensive for practical solar energy conversion applications, understanding and controlling the growth of CSVT GaAs on non-lattice-matched substrates such as Si [3] or Mo metal foils [13] is also important.…”
Section: Discussionmentioning
confidence: 99%
“…Mo is a chemically stable metal material that is widely used as a substrate for flexible solar cells. [103][104][105][106] Mo foil has a low coefficient of thermal expansion (CTE) of only 5.35 Â 10 À6 K À1 . [107] The matching between CTE Mo and CTE CZTSSE makes the internal residual stress between the films smaller after the heat treatment process.…”
Section: Mo Foilsmentioning
confidence: 99%
“…114,115 Moreover, GaAs-based solar cells have been demonstrated where the GaAs was grown on polycrystalline substrates with large grains, including Ge, Mo, and W/graphite. 116,117 However, only low efficiencies were obtained (around 10%) due to the polycrystalline nature of GaAs with grain boundaries and defects acting as recombination centers. 118 In order to obtain high-quality, single crystal-like layers on nonepitaxial wafers, a new technique has been demonstrated (seed-and-epitaxy) where very thin seed films with a single crystal-like structure are used as the substrate for growing the GaAs layer.…”
Section: Silicon-germanium and Iii-mentioning
confidence: 99%