Thin-film hafnium-hafnium oxide capacitors for high temperature operation

Huber, F.; Witt, W.; Pan, Wen

doi:10.1016/b978-0-08-012126-0.50013-8

Cited by 3 publications

(3 citation statements)

References 12 publications

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“…In this case, the oxide films have been formed in the same way as the TiO., at 12v with high initial forming current, and the electrodes consist of palladium or platinum. It is again true that if larger forming voltages and/or smaller current densities are employed during the anodization process, the rectification becomes less pronounced and nonpolar, thin-film capacitors of tantalum (10) and hafnium (27,28) with high-performance characteristics are obtained.…”

Section: P-n Junction Characteristics--mentioning

confidence: 99%

On the Rectification of Anodic Oxide Films of Titanium

Huber

1968

J. Electrochem. Soc.

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The phenomenon of electrolytic rectification in anodic oxide films has been studied extensively for the valve metal-valve metal oxide-electrolyte system for many years. This paper describes experimental results on the rectification of the electric current in anodic oxide films, especially TiO2 enclosed between two metallic electrodes. The rectification of the electric current is interpreted on the basis of a p-n junction within these oxide films. In addition, these junctions can exhibit photovoltaic effects and can be used for the fabrication of field effect devices. In these field effect transistors the electrical current flowing between two narrowly spaced electrodes deposited on the oxide surface can be modulated by the application of voltage to the titanium boatom electrode. This experiment shows that a conductive surface layer is adjacent to an insulating layer underneath.

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Section: P-n Junction Characteristics--mentioning

confidence: 99%

On the Rectification of Anodic Oxide Films of Titanium

Huber

1968

J. Electrochem. Soc.

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“…For the chemical deposition of Nb205, a low but manageable concentration of a gaseous niobium compound is needed. Reaction [2] goes completely to the right at all temperatures in question. In order to generate a low concentration of gaseous NbClx, very low chlorine concentrations in an inert gas carrier stream would have to be monitored carefully and good, or at least reproducible, contact between chlorine and the niobium source would have to be ensured.…”

Section: Growth Of Nb205 Films In a Flow Systemmentioning

confidence: 94%

“…The reduction in the area occupied by the capacitors in an integrated circuit by using a high permittivity material is a well established problem. Although many mateJ~ials and methods of preparation (1) have been tried, the established insulators SiO2 and SisN4 have yet to be seriously challenged, except for specialized purposes (2).…”

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confidence: 99%