Growth and Properties of Nb[sub 2]O[sub 5] Thin Film Capacitors

Brunner, Herwig; Emmenegger, Franzpeter; Robinson, M. L. A.; Rötschi, H.

doi:10.1149/1.2410973

Cited by 11 publications

(7 citation statements)

References 5 publications

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“…Niobium oxides have widely varying properties depending upon the exact stoichiometric ratio, crystal structure and test conditions [34]. For illustration, a 5 nm thick layer of Ni 2 O 5 with a relative permittivity,    41 0 , and a room-temperature loss tangent, q  tan 0.01 is considered here [41,42]. Again from equations (23) and (24) the expected PSD 50 μm above the surface at 1 MHz is around´-1.5 10 12 V 2 m −2 Hz −1 parallel to the surface and 3×10 −12 V 2 m −2 Hz −1 normal to the surface.…”

Section: Native Oxidesmentioning

confidence: 99%

Electric-field noise above a thin dielectric layer on metal electrodes

et al. 2016

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The electric-field noise above a layered structure composed of a planar metal electrode covered by a thin dielectric is evaluated and it is found that the dielectric film considerably increases the noise level, in proportion to its thickness. Importantly, even a thin (mono) layer of a low-loss dielectric can enhance the noise level by several orders of magnitude compared to the noise above a bare metal. Close to this layered surface, the power spectral density of the electric field varies with the inverse fourth power of the distance to the surface, rather than with the inverse square, as it would above a bare metal surface. Furthermore, compared to a clean metal, where the noise spectrum does not vary with frequency (in the radio-wave and microwave bands), the dielectric layer can generate electricfield noise which scales in inverse proportion to the frequency. For various realistic scenarios, the noise levels predicted from this model are comparable to those observed in trapped-ion experiments. Thus, these findings are of particular importance for the understanding and mitigation of unwanted heating and decoherence in miniaturized ion traps.

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Section: Native Oxidesmentioning

confidence: 99%

Electric-field noise above a thin dielectric layer on metal electrodes

et al. 2016

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“…Using amorphous NbO 2 thin films, monostable switching devices have also been prepared. Nb 2 O 5 exhibits a high dielectric constant and electrochromism. − Nb 2 O 5 is an excellent catalyst for the polymerization of propylene, dehydration of 2-butanol, and butene isomerization. , Nb 2 O 5 deposited on Pt foil can function as a thin film capacitor …”

Section: Introductionmentioning

confidence: 99%

“…11,12 Nb 2 O 5 deposited on Pt foil can function as a thin film capacitor. 13 The phase diagram of the Nb-O system compiled by Massalski et al 14 shows NbO, NbO 2 , and Nb 2 O 5 as the only stable oxide phases. More recent research on phase equilibria in the system Nb-O [15][16][17][18][19] has revealed the existence of several other oxide phases.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic Properties of Niobium Oxides

et al. 2010

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Thermodynamic properties of three oxides of niobium have been measured using solid state electrochemical cells incorporating yttria-doped thoria (YDT) as the electrolyte in the temperature range T = (1000 to 1300) K. The standard Gibbs energies of formation of NbO, NbO2, and NbO2.422 from the elements can be expressed as: △ f G NbO o ± 547 / J · mol − 1 = − 414 986 + 86 .861 ( T / normalK ) △ f G NbO 2 o ± 548 / J · mol − 1 = − 779 864 + 164 .438 ( T / normalK ) △ f G NbO 2.422 o ± 775 / J · mol − 1 = − 911 045 + 197 .932 ( T / normalK ) The results are discussed in comparison with thermodynamic data reported in the literature. The new results refine data for NbO and NbO2 presented in standard data compilations. There are no data in thermodynamic compilations for NbO2.422 (Nb12O29). In the absence of the heat capacity and enthalpy of formation measurements, only the Gibbs energy of formation of NbO2.422 can be assessed. The free energy of formation of stoichiometric Nb2O5 is evaluated on the basis of measurements on NbO2.422 and information available in the literature on phase boundary compositions and isothermal variation of nonstoichiometric parameter with oxygen potential for Nb2O5−x . The results suggest a minor revision of data for Nb2O5. A minimum in the Gibbs energy of mixing for the system Nb−O occurs in the nonstoichiometric domain of Nb2O5−x with x = 0.036.

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“…Breakdown strengths of the order of 1 • 106 Vcm -1 for ion-cathode grown films on Ta may be compared with the breakdown strengths of tantalum oxide films obtained by aqueous methods (14) and by usual plasma techniques (6,13,14). The breakdown strengths of vapor-anodized niobium oxide films are also comparable (17). The breakdown voltages in a forward (metal positive) direction for oxide films grown on Zr, Ti, W, and V metals are 111, 83, 66, and 31V, respectively.…”

Section: Resultsmentioning

confidence: 99%

Electrical Properties of Anodic Oxide Films of Ta, Nb, Zr, Ti, W, and V Formed by the Ion-Cathode Method

Husted

Gruss

Mackus

1971

J. Electrochem. Soc.

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Amorphous oxide films have been grown on Zr, Ti, W, Ta, Nb, and V by ionized gas anodization using the ion cathode as a source of negative ions. Films were grown on each metal at constant current to 175V followed by constant voltage for about 4 hr. Several electrical and optical properties were measured for the anodic films produced on these refractory metals. Resistivities of the anodic oxide films on Zr, Ti, W, Ta, Nb, and V ranged from 1014 to 1017 ohm‐cm. Breakdown voltages with the refractory metal positive (gold contact negative) were of the order of 31V to 111V. Film capacitances for these metals varied between 0.031 and 0.050 µf/cm2, and the dissipation factors averaged 0.015 for all the oxides except V which was 0.062. Thicknesses and refractive indices were obtained by ellipsometry for anodic films on Ta and Nb. Film thicknesses were respectively 0.61µ and 0.57µ for Ta and Nb whereas the refractive indices were 2.1 and 2.0. Dielectric constants calculated from capacitance measurements for these anodic films were 22 and 28, respectively. The properties of films prepared by the ion cathode method are compared with those produced by plasma and solution methods reported by others.

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Growth and Properties of Nb[sub 2]O[sub 5] Thin Film Capacitors

Abstract: not Available.

Cited by 11 publications

References 5 publications

Electric-field noise above a thin dielectric layer on metal electrodes

Electric-field noise above a thin dielectric layer on metal electrodes

Thermodynamic Properties of Niobium Oxides

Electrical Properties of Anodic Oxide Films of Ta, Nb, Zr, Ti, W, and V Formed by the Ion-Cathode Method

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