Thin Film Deposition Methods for CuInSe<sub><b>2</b></sub>Solar Cells

Kemell, Marianna; Ritala, Mikko; Leskelä, Markku

doi:10.1080/10408430590918341

Cited by 286 publications

(205 citation statements)

References 232 publications

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“…The record efficiency for a small-size CIGS thin-film solar cell is about 20 % [1]. CIGS solar cells can also be fabricated on a wide-area substrate cost-effectively [3][4]. These advantages offer CIGS a possibility to achieve the grid parity to compete with conventional technologies.…”

Section: Introductionmentioning

confidence: 97%

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Analysis of the Current-voltage Curves of a Cu(In,Ga)Se₂ Thin-film Solar Cell Measured at Different Irradiation Conditions

Lee¹,

Chung²,

Park³

et al. 2010

Journal of the Optical Society of Korea

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We analyze the current density -voltage (J -V) curve of a Cu(In,Ga)Se2 (CIGS) thin-film solar cell measured at different irradiation power densities. For the solar-cell sample investigated in this study, the fill factor and power conversion efficiency decreased as the irradiation power density (IPD) increased in the range of 2 to 5 sun. Characteristic parameters of solar cell including the series resistance (rs), the shunt resistance (rsh), the photocurrent density (JL), the saturation current density (Js) of an ideal diode, and the coefficient (Cs) of the diode current due to electron-hole recombination via ionized traps at the p-n interface are determined from a theoretical fit to the experimental data of the J -V curve using a two-diode model. As IPD increased, both rs and rsh decreased, but Cs increased.

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Section: Introductionmentioning

confidence: 97%

“…Recently, the Cu(In,Ga)Se2 (CIGS) thin-film solar cell has been the subject of intensive research and development in the photovoltaic industry [1][2][3][4][5][6]. CIGS has a great potential for solar cells with high power-conversion efficiencies.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the Current-voltage Curves of a Cu(In,Ga)Se₂ Thin-film Solar Cell Measured at Different Irradiation Conditions

Lee¹,

Chung²,

Park³

et al. 2010

Journal of the Optical Society of Korea

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“…1 The copper deficiency is believed to result in an abundance of copper vacancies. This expectation is supported by the remarkably low formation energy computed for V Cu in several prior theoretical works, including ours.…”

Section: A Copper Mass Transportmentioning

confidence: 99%

“…In the present work, we will go more in depth to the topic than previous studies, considering all three components of CIS. We use first-principles calculations to answer the following questions regarding mass transport in CIS: (1) What is the most probable mobile species? (2) How does the dominant mass transport mechanism for each component depend on the stoichiometry of the material and on the temperature?…”

Section: Introductionmentioning

confidence: 99%

Mass transport in CuInSe2 from first principles

Oikkonen

Ganchenkova

Seitsonen

et al. 2013

Journal of Applied Physics

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The wide scatter in experimental results has not allowed drawing solid conclusions on selfdiffusion in the chalcopyrite CuInSe2 (CIS). In this work, the defect-assisted mass transport mechanisms operating in CIS are clarified using first-principles calculations. We present how the stoichiometry of the material and temperature affect the dominant diffusion mechanisms. The most mobile species in CIS is shown to be copper, whose migration proceeds either via copper vacancies or interstitials. Both of these mass-mediating agents exist in the material abundantly and face rather low migration barriers (1.09 and 0.20 eV, respectively). Depending on chemical conditions, selenium mass transport relies either solely on selenium dumbbells, which diffuse with a barrier of 0.24 eV, or also on selenium vacancies whose diffusion is hindered by a migration barrier of 2.19 eV. Surprisingly, indium plays no role in long-range mass transport in CIS; instead, indium vacancies and interstitials participate in mechanisms that promote the formation of antisites on the cation sublattice. Our results help to understand how compositional inhomogeneities arise in CIS. The wide scatter in experimental results has not allowed drawing solid conclusions on self-diffusion in the chalcopyrite CuInSe 2 (CIS). In this work, the defect-assisted mass transport mechanisms operating in CIS are clarified using first-principles calculations. We present how the stoichiometry of the material and temperature affect the dominant diffusion mechanisms. The most mobile species in CIS is shown to be copper, whose migration proceeds either via copper vacancies or interstitials. Both of these mass-mediating agents exist in the material abundantly and face rather low migration barriers (1.09 and 0.20 eV, respectively). Depending on chemical conditions, selenium mass transport relies either solely on selenium dumbbells, which diffuse with a barrier of 0.24 eV, or also on selenium vacancies whose diffusion is hindered by a migration barrier of 2.19 eV. Surprisingly, indium plays no role in long-range mass transport in CIS; instead, indium vacancies and interstitials participate in mechanisms that promote the formation of antisites on the cation sublattice. Our results help to understand how compositional inhomogeneities arise in CIS. V C 2013 American Institute of Physics. [http://dx

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“…that this may be because of reduced recombination, 10 but others consider that is not likely the major responsible for the effect of Cu vacancies on performance. 11 Additionally, incorporation of Na, 9,10,12 is widely accepted as a key ingredient in building the best performance devices, but the origin of this effect remains debated, with suggestions that it may affect film growth (grain sizes and crystal orientation) [13][14][15][16][17] and p-type conductivity.…”

Section: Introductionmentioning

confidence: 99%

Predicted roles of defects on band offsets and energetics at CIGS (Cu(In,Ga)Se2/CdS) solar cell interfaces and implications for improving performance

Xiao

Goddard

2014

The Journal of Chemical Physics

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The laboratory performance of CIGS (Cu(In,Ga)Se 2 ) based solar cells (20.8% efficiency) makes them promising candidate photovoltaic devices. However, there remains little understanding of how defects at the CIGS/CdS interface affect the band offsets and interfacial energies, and hence the performance of manufactured devices. To determine these relationships, we use density functional theory with the B3PW91 hybrid functional that we validate to provide very accurate descriptions of the band gaps and band offsets. This confirms the weak dependence of band offsets on surface orientation observed experimentally. We predict that the conduction band offset (CBO) of perfect CuInSe 2 /CdS interface is large, 0.79 eV, which would dramatically degrade performance. Moreover we show that band gap widening induced by Ga adjusts only the valence band offset, and we find that Cd impurities do not significantly affect the CBO. Thus we show that Cu vacancies at the interface play the key role in enabling the tunability of CBO. We predict that Na further improves the CBO through electrostatically elevating the valence levels to decrease the CBO, explaining the observed essential role of Na for high performance. Moreover we find that K leads to a dramatic decrease in the CBO to 0.05 eV, much better than Na. We suggest that the efficiency of CIGS devices might be improved substantially by tuning the ratio of Na to K, with the improved phase stability of Na balancing phase instability from K. All these defects reduce interfacial stability slightly, but not significantly.

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Thin Film Deposition Methods for CuInSe₂Solar Cells

Cited by 286 publications

References 232 publications

Analysis of the Current-voltage Curves of a Cu(In,Ga)Se₂ Thin-film Solar Cell Measured at Different Irradiation Conditions

Analysis of the Current-voltage Curves of a Cu(In,Ga)Se₂ Thin-film Solar Cell Measured at Different Irradiation Conditions

Mass transport in CuInSe2 from first principles

Predicted roles of defects on band offsets and energetics at CIGS (Cu(In,Ga)Se2/CdS) solar cell interfaces and implications for improving performance

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Thin Film Deposition Methods for CuInSe2Solar Cells

Cited by 286 publications

References 232 publications

Analysis of the Current-voltage Curves of a Cu(In,Ga)Se2 Thin-film Solar Cell Measured at Different Irradiation Conditions

Analysis of the Current-voltage Curves of a Cu(In,Ga)Se2 Thin-film Solar Cell Measured at Different Irradiation Conditions

Mass transport in CuInSe2 from first principles

Predicted roles of defects on band offsets and energetics at CIGS (Cu(In,Ga)Se2/CdS) solar cell interfaces and implications for improving performance

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Product

Resources

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Thin Film Deposition Methods for CuInSe₂Solar Cells

Analysis of the Current-voltage Curves of a Cu(In,Ga)Se₂ Thin-film Solar Cell Measured at Different Irradiation Conditions

Analysis of the Current-voltage Curves of a Cu(In,Ga)Se₂ Thin-film Solar Cell Measured at Different Irradiation Conditions