Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

Davis, R. F.; Kelner, G.; Shur, M. S.; Palmour, John W.; Edmond, J. A.

doi:10.1109/5.90132

Cited by 394 publications

(97 citation statements)

References 115 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The temperature and gases flow were then held constant at the end of the second ramp, allowing the continuous epitaxial growth of 3C-SiC on the carbonized Si buffer layer [3]. After the growth process was completed, the wafer was cooled to room temperature in an Ar atmosphere [4]. The process flow is shown schematically in Figure 1, and the details of both the reactor construction and the growth process can be found in reference [5].…”

Section: Methodsmentioning

confidence: 99%

Residual Stress in CVD-grown 3C-SiC Films on Si Substrates

et al. 2008

View full text Add to dashboard Cite

Having superior mechanical properties, 3C-SiC is one of the target materials for power MEMS applications. Growing 3C-SiC films on Si is challenging, as there is a large mismatch in lattice parameter and thermal expansion between the SiC film and the Si substrate that needs to be accommodated, and results in high residual stress. Residual stress control is critical in MEMS devices as upon feature release it results in substantial deformation.3C-SiC single crystalline films were deposited on 50 mm (100) and (111) Si substrates in a hot-wall CVD reactor. The film tensile residual stress was so high that it fractured on the (111) Si wafer. The resulting film thickness on the (100) Si wafer was non-uniform, having a linear profile along the growth direction. This presented a challenge of using the substrate curvature method for calculating residual stress. Finite Element Method correction was applied to the Stoney's formula for calculating the residual stress along the wafer radius. Suggestions for reducing the amount of residual stress are made.

show abstract

Section: Methodsmentioning

confidence: 99%

Residual Stress in CVD-grown 3C-SiC Films on Si Substrates

et al. 2008

View full text Add to dashboard Cite

show abstract

“…Though a family of small-area S i c power devices could offer advantages in high-temperature operation, switching speed, and radiation hardness [l], [20], [21], the voltage and current ratings of silicon carbide power devices will not out-perform existing silicon power devices until improvements in S i c crystal growth enable larger defect-free areas.…”

Section: Discussion and Summarymentioning

confidence: 99%

Performance limiting micropipe defects in silicon carbide wafers

Neudeck

Powell²

1994

IEEE Electron Device Lett.

286

118

View full text Add to dashboard Cite

Abstract-We report on the characteristics of a major defect in mass-produced silicon carbide wafers which severely limits the performance of silicon carbide power devices. Micropipe defects originating in 4H-and 6H-Sic substrates were found to cause preavalanche reverse-bias point failures in most epitaxially-grown pn junction devices of 1 mm2 or larger in area. Until such defects are significantly reduced from their present density (on the order of 100's of micropipedcm'), silicon carbide power device ratings will be restricted to around several amps or less.

show abstract

“…The samples were grown heteroepitaxially via chemical vapor deposition (CVD) in a hot-wall reactor [3]. The thickness of the samples was around 1-2 µm.…”

Section: Methodsmentioning

confidence: 99%

“…We studied cubic SiC (3C-SiC) films grown on Si substrates, which are chemically inert, can withstand high temperatures, and have a high resistance to oxidation. Silicon carbide also has excellent electronic and thermal properties, including large reverse breakdown voltage, high electron mobility, high saturated electron drift velocity and excellent thermal conductivity relative to Si [3], making SiC attractive for MEMS applications under hostile conditions. Present trends indicate an increasing interest in the cubic polycrystalline form of SiC, namely poly-3C-SiC, as a MEMS material since it can be deposited on various substrates and micromachined in a similar fashion to Si [4].…”

Section: Introductionmentioning

confidence: 99%

Mechanical Properties of 3C-SiC Films for MEMS Applications

et al. 2007

View full text Add to dashboard Cite

There is a technological need for hard thin films with high elastic modulus and fracture toughness. Silicon carbide (SiC) fulfills such requirements for a variety of applications at high temperatures and for high-wear MEMS. A detailed study of the mechanical properties of single crystal and polycrystalline 3C-SiC films grown on Si substrates was performed by means of nanoindentation using a Berkovich diamond tip. The thickness of both the single and polycrystalline SiC films was around 1-2 µm. Under indentation loads below 500 µN both films exhibit Hertzian elastic contact without plastic deformation. The polycrystalline SiC films have an elastic modulus of 457 + 50 GPa and hardness of 33.5 + 3.3 GPa, while the single crystalline SiC films elastic modulus and hardness were measured to be 433 + 50 GPa and 31.2 + 3.7 GPa, respectively. These results indicate that polycrystalline SiC thin films are more attractive for MEMS applications when compared with the single crystal 3C-SiC, which is promising since growing single crystal 3C-SiC films is more challenging.

show abstract

Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

Cited by 394 publications

References 115 publications

Residual Stress in CVD-grown 3C-SiC Films on Si Substrates

Residual Stress in CVD-grown 3C-SiC Films on Si Substrates

Performance limiting micropipe defects in silicon carbide wafers

Mechanical Properties of 3C-SiC Films for MEMS Applications

Contact Info

Product

Resources

About