Thin Film Characterisation Using MeV Ion Beams

Sajavaara, Timo; Arstila, Kai

doi:10.1007/978-3-642-00623-4_13

Cited by 6 publications

(2 citation statements)

References 29 publications

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“…RBS is a method that can be used for obtaining depth-dependent information of the composition of a sample, well-suited for the study of thin films [110]. The sensitivity is low for light elements, but one can achieve a satisfying quantification of the elements as low in weight as O.…”

Section: Rutherford Back-scattering (Rbs)mentioning

confidence: 99%

Reactive Sputtering of Magnesium Hydride Thin Films for Photovoltaic Applications

et al. 2009

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Deposition of MgHx (MgH2 + Mg) thin films is performed using RF reactive sputtering in argon-hydrogen plasma. Films are characterized using x-ray diffraction (XRD), scanning electron microscopy, optical and resistivity measurements. Formation of crystalline MgH2 is confirmed by XRD, but the formation of some metallic Mg in the films could not be avoided. Increased H/Mg ratio by deposition at high hydrogen flow or high total pressure gives films that oxidize within days or weeks. Deposition at elevated substrate temperature results in improved crystallinity and stability. Initial studies of MgHx for silicon surface passivation are presented.

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Section: Rutherford Back-scattering (Rbs)mentioning

confidence: 99%

Reactive Sputtering of Magnesium Hydride Thin Films for Photovoltaic Applications

et al. 2009

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“…The optical, mechanical, and electrical properties of thin film structures depend a lot on film composition, interfacial topography and depth profile of the layer stack. Of the vast number of surface and sub-surface analysis techniques available to material scientists, nuclear techniques can readily offer quantitative and standard-free analysis with high resolution depth profiling not easily attainable by other means [4][5][6]. Heavy Ion Elastic Recoil Detection Analysis (Heavy Ion ERDA) is one of the latest nuclear analytical techniques whose development has been spurred on mostly by the need for simultaneous analysis of light elements in heavy element matrices [4,7,8].…”

Section: Introductionmentioning

confidence: 99%

The new Heavy Ion ERDA set up at iThemba LABS Gauteng: Multilayer thin film depth profiling using direct calculation and Monte Carlo simulation codes

Msimanga

Wamwangi

Comrie

et al. 2013

Nuclear Instruments and Methods in Physics Research Section B:

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We report here on the recently built Heavy Ion ERDA set up at iThemba LABS Gauteng; describing a typ-ical application in the study of interfacial reactions in an Al 2 O 3 -Ti ceramic-metal multilayer structure annealed in vacuum at 800 °C for 2 h. Depth profile extraction was found to be best obtained through combined use of direct calculation and Monte Carlo simulation codes as opposed to using just either of the methods. The obtained profile suggests a case of the Kirkendall effect, whereupon the inter-diffu-sion between the metal and the ceramic was largely due to the faster diffusion of the metal into the amor-phous ceramic than diffusion of the ceramic elements into the metallic layer.

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Improvement of sensitivity in high-resolution Rutherford backscattering spectroscopy

Hashimoto

Nakajima

Suzuki

et al. 2011

Review of Scientific Instruments

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The sensitivity (limit of detection) of high-resolution Rutherford backscattering spectroscopy (HRBS) is mainly determined by the background noise of the spectrometer. There are two major origins of the background noise in HRBS, one is the stray ions scattered from the inner wall of the vacuum chamber of the spectrometer and the other is the dark noise of the microchannel plate (MCP) detector which is commonly used as a focal plane detector of the spectrometer in HRBS. In order to reject the stray ions, several barriers are installed inside the spectrometer and a thin Mylar foil is mounted in front of the detector. The dark noise of the MCP detector is rejected by the coincidence measurement with the secondary electrons emitted from the Mylar foil upon the ion passage. After these improvements, the background noise is reduced by a factor of 200 at a maximum. The detection limit can be improved down to 10 ppm for As in Si at a measurement time of 1 h under ideal conditions.

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Thin Film Characterisation Using MeV Ion Beams

Cited by 6 publications

References 29 publications

Reactive Sputtering of Magnesium Hydride Thin Films for Photovoltaic Applications

Reactive Sputtering of Magnesium Hydride Thin Films for Photovoltaic Applications

The new Heavy Ion ERDA set up at iThemba LABS Gauteng: Multilayer thin film depth profiling using direct calculation and Monte Carlo simulation codes

Improvement of sensitivity in high-resolution Rutherford backscattering spectroscopy

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