Thin-disk Raman laser operation of Yb:YVO₄/YVO₄around 1120 nm

Abstract

We present diode-pumped Yb:YVO 4 /YVO 4 thin-disk Raman laser operation around 1120 nm. The thin-disk crystals, Yb:YVO 4 , and the Raman crystal, YVO 4 , are cut with 250 μm and 20 mm, respectively. In multimode configurations, up to 0.91 W of Raman laser output power and a maximum slope efficiency of 10% are demonstrated corresponding to a pump power of 10 W. A continuous wavelength tuning range of 54 nm from 1096 to 1150 nm with a maximum output power of 320 mW at 1126 nm is confirmed.

Investigation of pre-pulse pumping laser for preserving temporal waveform of stimulated Raman scattering

“…Solid-state Raman lasers have been rapidly developed over the past decades because of their high doped intensity, compactness, high optical-conversion efficiency, high gain efficiency, and high optical-damage threshold compared with Raman lasers based on gaseous and liquid media. Continuous wave, nanosecond, picosecond, and femotsecond Raman lasers based on diamond, Ba(NO 3 ) 2 , BaWO 4 , CaWO 4 etc have been developed with extended spectral spanning ranging from deep ultraviolet to mid-infrared [7][8][9][10][11][12][13], and the maximum wavelength of the Raman lasers has reached 3.8 µm, which was achieved with a diamond-based Raman system [14]. The laser diode directly pumped self-Raman laser combining the laser emission and stimulated Raman scattering have also been reported based on the active gain media, including Nd:YVO 4 , Nd:LuVO 4 and Nd:GdVO 4 [15][16][17].…”