Thickness effect on ultrafast thermalization of carriers in above-band-gap states in ZnO epitaxial films

Ou, Po-Chi; Lin, Ja‐Hon; Chang, Chi-An; Liu, Wei-Rein; Hsieh, Wen–Feng

doi:10.1088/0022-3727/43/49/495103

Cited by 17 publications

(11 citation statements)

References 20 publications

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“…These results deal with a photogenerated non-equilibrium carriers (electrons and holes). Similar values (1.2 ps, 0.81 ps and 0.69 ps) have been reported earlier [14] for the unspecified photogenerated carrier density. The most recent time-resolved pump-probe optical measurements with the given photogenerated carrier density report slightly shorter relaxation times at higher densities: 0.77 ps [15] and 0.85 ps-0.7 ps [13] (Fig.3, open square and triangle).…”

Section: Discussionsupporting

confidence: 89%

Electron energy relaxation in wurtzite ZnO and GaN

Šermukšnis¹,

Ramonas²,

Liberis³

et al. 2013

2013 22nd International Conference on Noise and Fluctuations (ICNF)

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Experimental data and Monte-Carlo modeling of hot-electron fluctuations are used for investigation of hot-electron energy relaxation in donor-doped bulk wurtzite ZnO and GaN subjected to a pulsed dc. The extracted electron energy relaxation time depends on the electron density. The experimental value of 0.84 ps is obtained at 5.5x10 17 cm −3 in a reasonably good agreement with the results reported from time-resolved optical measurements. The relaxation becomes faster at a lower electron density where the optical data are not available. The density dependence is discussed in the frame of hot-phonon effect. ICNF2013978-1-4799-0671-0/13/$31.00 c ⃝2013 IEEE

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Section: Discussionsupporting

confidence: 89%

Electron energy relaxation in wurtzite ZnO and GaN

Šermukšnis¹,

Ramonas²,

Liberis³

et al. 2013

2013 22nd International Conference on Noise and Fluctuations (ICNF)

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“…3(a) show non-Markovian fast decay at the beginning but become slower after evolving a certain time. Such phenomena can also be observed in the carrier relaxation in semiconductor materials [35,36].…”

Section: A Non-markovian Decay Regime With No Bound Dsmentioning

confidence: 79%

Calculation of spontaneous emission from a V-type three-level atom in photonic crystals using fractional calculus

Huang

et al. 2011

Phys. Rev. A

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Fractional time derivative, an abstract mathematical operator of fractional calculus, is used to describe the real optical system of a V-type three-level atom embedded in a photonic crystal. A fractional kinetic equation governing the dynamics of the spontaneous emission from this optical system is obtained as a fractional Langevin equation. Solving this fractional kinetic equation by fractional calculus leads to the analytical solutions expressed in terms of fractional exponential functions. The accuracy of the obtained solutions is verified through reducing the system into the special cases whose results are consistent with the experimental observation. With accurate physical results and avoiding the complex integration for solving this optical system, we propose fractional calculus with fractional time derivative as a better mathematical method to study spontaneous emission dynamics from the optical system with non-Markovian dynamics.

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“…In particular, these semiconductor oxides are good candidates for manufacturing transparent conductive oxides (TCO's) due to its simultaneous high optical transparency and low electrical conductivity. Strong and ultrafast nonlinear optical properties in different zinc oxide (ZnO) structures have been reported [2][3][4][5], and furthermore, ZnO is one of the metal oxide semiconductors more suitable for optoelectronic applications given its non-toxicity and low cost of the raw chemicals [6]. ZnO is an "n-type" wide band gap A II B VI semiconductor with hexagonal wurtzite structure (space group C 4 6v (C6 3 mc)) with lattice parameters of a = 0.3296, and c = 0.52065 nm [7].…”

Section: Introductionmentioning

confidence: 99%