2023
DOI: 10.1002/smll.202302065
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Thickness‐Dependent Superconductivity in a Layered Electride on Silicon

Abstract: Layered materials exhibit a plethora of fascinating properties. The challenge is to make the materials into epitaxial films, preferably integrated with mature technological platforms to facilitate their potential applications. Progress in this direction can establish the film thickness as a valuable parameter to control various phenomena, superconductivity in particular. Here, a synthetic route to epitaxial films of SrAlSi, a layered superconducting electride, on silicon is designed. A set of films ranging in … Show more

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Cited by 4 publications
(3 citation statements)
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References 60 publications
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“…To avoid this problem, we employ silicon as a substrate to synthesize GdAlSi. In this case, the substrate serves also as a reactant; the right amount of Si, controlled by the fluxes of Gd and Al, is supplied to the surface via the efficient vacancy mechanism. ,, Third, the substrate should stabilize the intended polymorph structure, i.e., have the same symmetry and matching lattice parameters. Therefore, we employ the (111) face of silicon: its surface represents a covalently bound silicene of the honeycomb structure compatible with the graphene-like AlSi layer.…”
Section: Resultsmentioning
confidence: 99%
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“…To avoid this problem, we employ silicon as a substrate to synthesize GdAlSi. In this case, the substrate serves also as a reactant; the right amount of Si, controlled by the fluxes of Gd and Al, is supplied to the surface via the efficient vacancy mechanism. ,, Third, the substrate should stabilize the intended polymorph structure, i.e., have the same symmetry and matching lattice parameters. Therefore, we employ the (111) face of silicon: its surface represents a covalently bound silicene of the honeycomb structure compatible with the graphene-like AlSi layer.…”
Section: Resultsmentioning
confidence: 99%
“…To synthesize the layered (trigonal) polymorph of GdAlSi, we remove the natural oxide from the Si(111) surface to produce the characteristic 7 × 7 reconstruction and then deposit stoichiometric amounts of Gd and Al at the heated substrate (see the Materials and Methods section). It should be noted that the synthesis does not require any template layers; this is in contrast to the MBE synthesis of SrAlSi on Si(111) involving a self-sacrificial template of SrSi 2 for epitaxy. The procedure results in the layer-by-layer growth of the monocrystalline trigonal polymorph.…”
Section: Resultsmentioning
confidence: 99%
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