2017
DOI: 10.1007/s12274-017-1696-y
|View full text |Cite
|
Sign up to set email alerts
|

Thickness-dependent phase transition and optical behavior of MoS2 films under high pressure

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

3
26
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 34 publications
(29 citation statements)
references
References 46 publications
3
26
0
Order By: Relevance
“…We found that the bandgap behavior of MoS 2 /tetracene is similar to that of the monolayer MoS 2 , which exhibits a concave-downward curve with the maximum bandgap of 0.87 and 1.80 eV found at the pressure of −7.78 and −10.69 GPa for the MoS 2 /tetracene and monolayer MoS 2 , respectively. The concave-downward curve for the bandgap versus the pressure for the MoS 2 system was found to be in good agreement with experiment, 35 while that for the MoS 2 /tetracene is similar to that of an n-type semiconductor, the MoS 2 /PEI interface, in the previous study. 33,36 There is a little difference in the behavior of the bandgap versus the pressure for MoS 2 /F 4 TCNQ and MoS 2 /PTCDA compared to that of the monolayer MoS 2 .…”
Section: Resultssupporting
confidence: 86%
“…We found that the bandgap behavior of MoS 2 /tetracene is similar to that of the monolayer MoS 2 , which exhibits a concave-downward curve with the maximum bandgap of 0.87 and 1.80 eV found at the pressure of −7.78 and −10.69 GPa for the MoS 2 /tetracene and monolayer MoS 2 , respectively. The concave-downward curve for the bandgap versus the pressure for the MoS 2 system was found to be in good agreement with experiment, 35 while that for the MoS 2 /tetracene is similar to that of an n-type semiconductor, the MoS 2 /PEI interface, in the previous study. 33,36 There is a little difference in the behavior of the bandgap versus the pressure for MoS 2 /F 4 TCNQ and MoS 2 /PTCDA compared to that of the monolayer MoS 2 .…”
Section: Resultssupporting
confidence: 86%
“…155 This can be avoided by encapsulation of the monolayer by h-BN 155 that increases the 2D material effective thickness. Alternatively, monolayers are deposited directly on the diamond anvil surface [156][157][158][159] rather than on Si/SiO 2 substrates. Indeed, these latter were found to add extra strain, thus unbalancing the ideal hydrostatic condition and introducing intralayer distortions apparent as a splitting and softening of the Raman modes.…”
Section: E Hydrostatic Pressurementioning
confidence: 99%
“…19 In addition to the ability to tune the electronic properties of the monolayer MoS 2 , the applied strain was found to modify the photoluminescence (PL) intensity. The PL maximum peak of the monolayer MoS 2 exhibited a blue shi 20,21 at the rate of approximately 20 meV GPa À1 . At the pressure of 25 GPa, both real and imaginary parts of the dielectric function were shied to red, and the peak height increases correspondence with an enhancement of the optical absorption.…”
Section: Introductionmentioning
confidence: 99%