Thickness dependence of temperature coefficient of resistance and neel temperature in MnTe films

Thanigaimani, V.; Angadi, M. A.

doi:10.1007/bf00420217

Cited by 10 publications

(2 citation statements)

References 14 publications

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“…These applications arise from their optical and electrical properties. They have band gaps (1.1 -1.8 eV) well fitted to solar spectrum [6][7][8]. The direct and indirect gaps are derived from non bonding molecular orbital which leads to high corrosion resistance [9].…”

Section: Introductionmentioning

confidence: 99%

MOCVD of Molybdenum Sulphide Thin Film Via Single Solid Source Precursor Bis-(Morpholinodithioato-s,s’)-Mo

Olofinjana¹,

Egharevba²,

Taleatu³

et al. 2011

JMP

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A single solid source precursor bis-(morpholinodithioato-s,s')-Mo was prepared and molybdenum sulphide thin film was deposited on sodalime glass using Metal Organic Chemical Vapour Deposition (MOCVD) technique at deposition temperature of 420˚C. The film was characterized using Rutherford Backscattering Spectroscopy (RBS), Ultraviolet-Visible Spectroscopy, Four-point Probe technique, Scanning Electron Microscopy (SEM), X-ray Diffractometry (XRD) and Atomic Force Microscopy (AFM). A direct optical band gap of 1.77 eV was obtained from the analysis of the absorption spectrum. The sheet resistance was found to be of the order of 10-5 Ω-1 •cm-1. SEM micrographs of the films showed the layered structure of the film with an estimated grain size that is less than 2 µm while XRD indicates parallel orientation of the basal plane to the substrate surface.

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Section: Introductionmentioning

confidence: 99%

MOCVD of Molybdenum Sulphide Thin Film Via Single Solid Source Precursor Bis-(Morpholinodithioato-s,s’)-Mo

Olofinjana¹,

Egharevba²,

Taleatu³

et al. 2011

JMP

View full text Add to dashboard Cite

show abstract

“…This gradual increase can be explained as a combinatorial effect of the 12% reduction in film thickness from Ag rich to Cu rich films and the higher bulk resistivity of Cu (1.7 x 10 -8 m at 300K) compared to Ag (1.6 x 10 -8 m at 300K) [37]. The transition metals in their bulk forms have a positive TCR in the order of 1000s of ppm/˚C, however, TCR values of thin film structures are known to be very different from their bulk counterparts because of surface scattering and grain boundary effects becoming dominant and making the TCR negative [38]. As shown in figure 3(a), the TCR value is seen to become progressively negative with increasing Cu concentration from -233±10 ppm/˚C for Mn3AgN to -351±6 ppm/˚C for Mn3CuN.…”

Section: Electrical Characterizationmentioning

confidence: 99%