Thickness dependence of structural and electrical characteristics of ZrO2 thin films as grown on Si by chemical-vapor deposition

Abstract

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Nanocrystallized tetragonal metastable ZrO2 thin films deposited by metal-organic chemical vapor deposition for 3D capacitors

“…It is well known that preparation methods (physical or chemical processes), preparation parameters (temperature of growth and O 2 partial pressure) [7,26,27] and film thicknesses [27][28][29][30] greatly influence the crystalline structure of the deposited material. In particular, for the zirconia system, general trends can be drawn for ZrO 2 polymorph.…”

MOCVD of ZrO2 films from bis(t-butyl-3-oxo-butanoato)zirconium(IV): some theoretical (thermodynamic) and experimental aspects

“…Though there may be some quantitative uncertainty in the predictions made by such analysis, they are usually accurate enough to guide MOCVD process development (Stringfellow 1989). A considerable amount of experimental work has been reported on the effect of processing conditions on the purity, morphology, and growth rate of ZrO 2 thin films grown by MOCVD (Dharmaprakash and Shivashankar 2003a, b;Pasko et al 2004;Huang and Wu 2004;Patil et al 2006). However, to our knowledge, there has been no report of a detailed thermodynamic analysis on the MOCVD of ZrO 2 films aimed at predicting the effect of processing conditions on the deposition.…”

A study of thermally stimulated dielectric relaxation currents in Al/Lu2O3/Al thin-film sandwiches

“…Several transition metal oxides, such as ZrO 2 and HfO 2 have been studied as alternative high-dielectric constant thin-film materials for replacement of SiO 2 layers in thin-film microdevices [2,5,7]. Recently, thin films of rare earth oxides (REO) have also been investigated as a new, alternative and perspective group of materials for different thin-film applications [6,8,9].…”

“…Most of examinations have been focused on metal/insulator/metal (MIM) structures due to potential applications as miniaturized capacitors or for dynamic access memories (DRAMs) [1][2][3]. Simultaneously, examinations of metal/insulator/semiconductor (MIS) structures have been carried out due to potential applications in MISFETs transistors [6][7][8].…”

“…In recent years various experimental studies in search of dielectric materials for integrated optoelectronic and electronic devices have been conducted [1][2][3][4][5][6][7][8]. These applications utilize dielectric materials mainly in thinfilm forms.…”