A study of thermally stimulated dielectric relaxation currents in Al/Lu2O3/Al thin-film sandwiches

Dielectric relaxation of Al/Lu2O3/Al thin film structures from 10μHz to 10MHz

“…Film configurations were obtained using a masking system. More deposition details may be found elsewhere [11,14]. After depositions the film thicknesses were measured accurately using an interference microscope.…”

“…Taking into account a strong dependence of the capacitance of structures on the voltage, as well as the results of our previous papers [10,11,14], we assumed that Schottky barriers are formed at metal/insulator boundaries. The capacitances of the depletion regions are…”

“…Recently, one can observe an increasing interest in thin films of rare earth oxides (REO) as potential materials for different modern electronic and optoelectronic applications [1][2][3][4][5][6][7][8][9][10][11]. Thin film structures of a type metal/insulator/semiconductor (MIS) for MISFETs transistors and metal/insulator/metal (MIM) for miniaturized capacitors and for dynamic access memories (DRAMs) are intensively investigated [1,2,5].…”

“…In our previous papers we have examined dielectric properties of MIM structures, including thin films of REO [10,11,14]. We have shown that in measured dielectric response of these structures a contribution coming from the volume of the film, as well as from metal/insulator contact is observed.…”

“…We have shown that in measured dielectric response of these structures a contribution coming from the volume of the film, as well as from metal/insulator contact is observed. Recently, Al/Lu 2 O 3 /Al thin film structures have been examined by means of thermally stimulated dielectric relaxation currents (TSDRC) [11]. In this paper, the broadband dielectric spectroscopy has been applied for examination of dielectric properties of Al/ Lu 2 O 3 /Al thin film sandwiches.…”